MJ11012 ON Semiconductor, MJ11012 Datasheet
MJ11012
Specifications of MJ11012
Related parts for MJ11012
MJ11012 Summary of contents
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... MJ11015 (PNP); MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − 1000 (Min − 20 Adc FE C • Monolithic Construction with Built−in Base Emitter Shunt Resistor • ...
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... BASE ≈ 40 EMITTER Figure 1. Darlington Circuit Schematic (T = 25_C unless otherwise noted.) C MJ11012 MJ11015, MJ11016 MJ11012 MJ11015, MJ11016 = 150_C) MJ11012 = 150_C) MJ11015, MJ11016 C http://onsemi.com 2 COLLECTOR ≈ 8.0 k ≈ 40 EMITTER Î Î Î Î Î Î Î Î Î Î Î Î ...
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... Figure 5. Active Region DC Safe Operating Area At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the − V limitations imposed by secondary breakdown http://onsemi.com 3 PNP MJ11015 NPN MJ11012, MJ11016 = 3 Vdc 100 200 300 500 f, FREQUENCY (kHz) Figure 3. Small− ...
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... BSC 16.89 BSC N --- 0.830 --- 21.08 Q 0.151 0.165 3.84 4.19 U 1.187 BSC 30.15 BSC V 0.131 0.188 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJ11012/D ...