2N6035 ON Semiconductor, 2N6035 Datasheet
2N6035
Specifications of 2N6035
Related parts for 2N6035
2N6035 Summary of contents
Page 1
... Plastic Darlington Complementary Silicon Power Transistors Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications. Features • ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V • ...
Page 2
... Symbol Min Max Unit V Vdc CEO(sus) 40 − 60 − 80 − ...
Page 3
R & R VARIED TO OBTAIN DESIRED CURRENT LEVELS MUST BE FAST RECOVERY TYPE, eg: 1 ≈ 100 mA 1N5825 USED ABOVE I B ≈ 100 mA MSD6100 USED BELOW approx ...
Page 4
... V , COLLECTOR-EMITTER VOLTAGE (VOLTS) CE Figure 4. 2N6035, 2N6036 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate ...
Page 5
... BE(sat 1.4 1 250 CE(sat 0.6 0.2 0.04 0.06 0.1 0.2 0.4 0 COLLECTOR CURRENT (AMP) C ORDERING INFORMATION Device 2N6034 2N6034G 2N6035 2N6035G 2N6036 2N6036G 2N6038 2N6038G 2N6039 2N6039G 3 25° 0.5 A 2.6 4.0 A 2.2 1.8 1.4 1.0 0 100 0.1 0.2 Figure 8 ...
Page 6
... TYP Q 0.148 0.158 3.76 4.01 R 0.045 0.065 1.15 1.65 S 0.025 0.035 0.64 0.88 U 0.145 0.155 3.69 3.93 V 0.040 --- 1.02 --- STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 2N6035/D ...