NSBC124EPDXV6T5 ON Semiconductor, NSBC124EPDXV6T5 Datasheet

NSBC124EPDXV6T5

Manufacturer Part Number

NSBC124EPDXV6T5

Description

Digital Transistors 100mA Complementary

Manufacturer

ON Semiconductor

Datasheet

1.NSBC124XPDXV6T5.pdf (14 pages)

Specifications of NSBC124EPDXV6T5

Configuration

Dual

Transistor Polarity

PNP

Typical Input Resistor

22 KOhms

Typical Resistor Ratio

Mounting Style

SMD/SMT

Package / Case

SOT-563-6

Collector- Emitter Voltage Vceo Max

50 V

Continuous Collector Current

0.1 A

Peak Dc Collector Current

100 mA

Power Dissipation

357 mW

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NSBC124EPDXV6T5G

Manufacturer:

Quantity:

30 000

Current page: 1 of 14
Download datasheet (159Kb)

NSBC114EPDXV6T1G,

NSBC114EPDXV6T5G

Dual Bias Resistor

Transistors

NPN and PNP Silicon Surface Mount

Transistors with Monolithic Bias

Resistor Network

a monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

integrating them into a single device. In the NSBC114EPDXV6T1

series, two complementary BRT devices are housed in the SOT−563

package which is ideal for low power surface mount applications

where board space is at a premium.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 @ Minimum Pad

MAXIMUM RATINGS

and Q

November, 2008 − Rev. 5

THERMAL CHARACTERISTICS

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Total Device Dissipation

Derate above 25°C (Note 1)

Thermal Resistance (Note 1)

Junction-to-Ambient

Total Device Dissipation

Derate above 25°C (Note 1)

Thermal Resistance (Note 1)

Junction-to-Ambient

Junction and Storage Temperature

The BRT (Bias Resistor Transistor) contains a single transistor with

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

Available in 8 mm, 7 inch Tape and Reel

These are Pb−Free Devices

= 25°C (Note 1)

(Both Junctions Heated)

, − minus sign for Q

(One Junction Heated)

Characteristic

Rating

(PNP) omitted)

= 25°C unless otherwise noted, common for Q

Symbol

CBO

CEO

, T

qJA

stg

−55 to +150

Value

Max

100

357

350

500

250

2.9

4.0

mW/°C

mAdc

°C/W

Unit

Vdc

°C

NSBC114EPDXV6T1G

NSBC114EPDXV6T5G

†For information on tape and reel specifications,

See specific marking information in the device marking table

on page 2 of this data sheet.

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

(Note: Microdot may be in either location)

DEVICE MARKING INFORMATION

Device

xx = Specific Device Code

M = Date Code

ORDERING INFORMATION

(3)

(4)

MARKING DIAGRAM

= Pb−Free Package

http://onsemi.com

(see table on page 2)

CASE 463A

SOT−563

PLASTIC

xx MG

Package

SOT−563

(5)

Publication Order Number:

(2)

NSBC114EPDXV6/D

4000/Tape & Reel

8000/Tape & Reel

4 mm pitch

2 mm pitch

Shipping

(1)

(6)

†

Related parts for NSBC124EPDXV6T5

NSBC124EPDXV6T5 Summary of contents

Page 1

... The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSBC114EPDXV6T1 series, two complementary BRT devices are housed in the SOT− ...

Page 2

DEVICE MARKING AND RESISTOR VALUES Device NSBC114EPDXV6T1G NSBC124EPDXV6T1G NSBC144EPDXV6T1G NSBC114YPDXV6T1G NSBC114TPDXV6T1G (Note 2) NSBC143TPDXV6T1G (Note 2) NSBC113EPDXV6T1G (Note 2) NSBC123EPDXV6T1G (Note 2) NSBC143EPDXV6T1G (Note 2) NSBC143ZPDXV6T1G (Note 2) NSBC124XPDXV6T1G (Note 2) NSBC123JPDXV6T1G (Note 2) ELECTRICAL CHARACTERISTICS (T = 25°C unless ...

Page 3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, common for Q A Characteristic ON CHARACTERISTICS (Note 3) Collector-Emitter Saturation Voltage ( mA 0 ...

Page 4

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, common for Q A Characteristic ON CHARACTERISTICS (Note 3) Input Resistor Resistor Ratio 2. New resistor combinations. Updated curves to follow in subsequent data sheets. 3. Pulse Test: Pulse Width < 300 ...

Page 5

TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDXV6T1 NPN TRANSISTOR 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat ...

Page 6

TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDXV6T1 PNP TRANSISTOR -25°C A 0.1 75°C 0. COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS − NSBC124EPDXV6T1 NPN TRANSISTOR -25°C A 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat ...

Page 8

TYPICAL ELECTRICAL CHARACTERISTICS − NSBC124EPDXV6T1 PNP TRANSISTOR -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat ...

Page 9

TYPICAL ELECTRICAL CHARACTERISTICS − NSBC144EPDXV6T1 NPN TRANSISTOR -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 22. V versus I CE(sat) 1 0.8 0.6 0.4 0.2 ...

Page 10

TYPICAL ELECTRICAL CHARACTERISTICS − NSBC144EPDXV6T1 PNP TRANSISTOR -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 27. V versus I CE(sat) 1 0.8 0.6 0.4 0.2 ...

Page 11

TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114YPDXV6T1 NPN TRANSISTOR 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 32. V versus I CE(sat) 4 3.5 3 2.5 2 1.5 1 0.5 ...

Page 12

TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114YPDXV6T1 PNP TRANSISTOR 0.1 75°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 37. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 ...

Page 13

TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114TPDXV6T1 1000 100 1 COLLECTOR CURRENT (mA) C Figure 42. DC Current Gain − PNP TYPICAL ELECTRICAL CHARACTERISTICS − NSBC143TPDXV6T1 1000 100 1 COLLECTOR CURRENT (mA) C Figure 44. DC ...

Page 14

... M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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