DTC114EXV3T1 ON Semiconductor, DTC114EXV3T1 Datasheet

Digital Transistors 100mA 50V BRT NPN

DTC114EXV3T1

Manufacturer Part Number
DTC114EXV3T1
Description
Digital Transistors 100mA 50V BRT NPN
Manufacturer
ON Semiconductor
Datasheet

Specifications of DTC114EXV3T1

Configuration
Single
Transistor Polarity
NPN
Typical Input Resistor
10 KOhms
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Package / Case
SC-89-3
Collector- Emitter Voltage Vceo Max
50 V
Continuous Collector Current
0.1 A
Peak Dc Collector Current
100 mA
Power Dissipation
0.3 W
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
DTC114EXV3T1 Series
Digital Transistors (BRT)
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
device and its external resistor bias network. The digital transistor
contains a single transistor with a monolithic bias network consisting
of two resistors; a series base resistor and a base−emitter resistor. The
digital transistor eliminates these individual components by
integrating them into a single device. The use of a digital transistor can
reduce both system cost and board space. The device is housed in the
SC−89 package which is designed for low power surface mount
applications.
MAXIMUM RATINGS
January, 2004 − Rev. 0
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
This new series of digital transistors is designed to replace a single
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape & Reel
Lead−Free Solder Plating (Pure Sn)
Semiconductor Components Industries, LLC, 2004
Rating
(T
A
= 25 C unless otherwise noted)
Symbol
V
V
CBO
CEO
I
C
Value
100
50
50
1
mAdc
Unit
Vdc
Vdc
(INPUT)
BASE
PIN 1
xx = Specific Device Code
D = Date Code
MARKING DIAGRAM
TRANSISTORS
(See Marking Table on page 2)
http://onsemi.com
NPN SILICON
R1
R2
DIGITAL
1
CASE 463C
STYLE 1
3
SC−89
xx D
Publication Order Number:
1
3
2
(GROUND)
2
EMITTER
COLLECTOR
PIN 2
(OUTPUT)
DTC114EXV3T1/D
PIN 3

Related parts for DTC114EXV3T1

DTC114EXV3T1 Summary of contents

Page 1

... DTC114EXV3T1 Series Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors ...

Page 2

... Total Device Dissipation, FR−4 Board (Note Derate above 25 C Thermal Resistance, Junction−to−Ambient (Note 2) Junction and Storage Temperature Range 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 1.0 Inch Pad. DTC114EXV3T1 Series R2 (K) Shipping† 10 3000/Tape & Reel http://onsemi.com 2 Symbol ...

Page 3

... Output Voltage (off Input Resistor Resistor Ratio DTC114EXV3T1/DTC124EXV3T1/ DTC144EXV3T1 DTC114YXV3T1 DTC143TXV3T1/DTC114TXV3T1 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. DTC114EXV3T1 Series ( unless otherwise noted) A Symbol = CBO = CEO DTC114EXV3T1 I EBO DTC124EXV3T1 DTC144EXV3T1 DTC114YXV3T1 DTC114TXV3T1 DTC143TXV3T1 = (BR)CBO V (BR)CEO DTC114EXV3T1 h FE ...

Page 4

... D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 Figure 2. Normalized Thermal Response DTC114EXV3T1 Series R = 600 C 100 T , AMBIENT TEMPERATURE ( C) A Figure 1. Derating Curve 0.01 0.1 1.0 t, TIME (s) http://onsemi.com 4 150 10 100 1000 ...

Page 5

... TYPICAL ELECTRICAL CHARACTERISTICS − DTC114EXV3T1 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 3. V versus I CE(sat REVERSE BIAS VOLTAGE (VOLTS) R Figure 5. Output Capacitance 0 0.1 0 Figure 7. Input Voltage versus Output Current DTC114EXV3T1 Series 1000 T = − 100 100 MHz 0.1 0.01 0.001 Figure 6. Output Current versus Input Voltage T = − ...

Page 6

... I , COLLECTOR CURRENT (mA) C Figure 8. V versus I CE(sat REVERSE BIAS VOLTAGE (VOLTS) R Figure 10. Output Capacitance 100 0.1 0 Figure 12. Input Voltage versus Output Current DTC114EXV3T1 Series 1000 100 100 MHz 0.1 0.01 0.001 Figure 11. Output Current versus Input Voltage T = − ...

Page 7

... COLLECTOR CURRENT (mA) C Figure 13. V versus I CE(sat) 1 0.8 0.6 0.4 0 REVERSE BIAS VOLTAGE (VOLTS) R Figure 15. Output Capacitance 100 0.1 0 Figure 17. Input Voltage versus Output Current DTC114EXV3T1 Series 1000 25 C 100 100 MHz 0.1 0.01 0.001 Figure 16. Output Current versus Input Voltage = 0 ...

Page 8

... I , COLLECTOR CURRENT (mA) C Figure 18. V versus I CE(sat) 4 3.5 3 2.5 2 1 REVERSE BIAS VOLTAGE (VOLTS) R Figure 20. Output Capacitance 0.1 0 Figure 22. Input Voltage versus Output Current DTC114EXV3T1 Series 300 −25 C 250 200 75 C 150 100 100 MHz Figure 21. Output Current versus Input Voltage = 0 ...

Page 9

... DTC114EXV3T1 Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V FROM P OR OTHER LOGIC Figure 23. Level Shifter: Connects Volt Circuits to Logic V CC OUT IN Figure 24. Open Collector Inverter: Inverts the Input Signal http://onsemi.com ISOLATED LOAD Figure 25. Inexpensive, Unregulated Current Source 9 +12 V LOAD ...

Page 10

... Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com DTC114EXV3T1 Series PACKAGE DIMENSIONS SC−89 CASE 463C−03 ISSUE C ...

Related keywords