MUN5111T1 ON Semiconductor, MUN5111T1 Datasheet

Digital Transistors 100mA 50V BRT PNP

MUN5111T1

Manufacturer Part Number
MUN5111T1
Description
Digital Transistors 100mA 50V BRT PNP
Manufacturer
ON Semiconductor
Datasheet
1.MUN5132T1.pdf (13 pages)

Specifications of MUN5111T1

Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
10 KOhms
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Package / Case
SC-70-3
Collector- Emitter Voltage Vceo Max
50 V
Continuous Collector Current
0.1 A
Peak Dc Collector Current
100 mA
Power Dissipation
202 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MUN5111T1G
Manufacturer:
ON Semiconductor
Quantity:
30 790
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MUN5111T1G
Manufacturer:
ON Semiconductor
Quantity:
32
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MUN5111T1G
Manufacturer:
ON
Quantity:
30 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
MUN5111T1G
Manufacturer:
ON/安森美
Quantity:
20 000
MUN5111T1 Series
Bias Resistor Transistors
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space. The device is housed in
the SC−70/SOT−323 package which is designed for low power
surface mount applications.
Features
•
•
•
•
•
•
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 10
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Lead
Junction and Storage Temperature
This new series of digital transistors is designed to replace a single
The modified gull−winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the
Device Number to order the 13 inch/10,000 unit reel.
Compliant
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC−70/SOT−323 package can be soldered using wave or reflow.
Available in 8 mm embossed tape and reel − Use the Device Number
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
T
Range
A
= 25°C
Characteristic
Rating
(T
A
= 25°C unless otherwise noted)
Symbol
Symbol
T
V
V
R
R
J
P
, T
CBO
CEO
I
qJA
qJL
C
D
stg
202 (Note 1)
310 (Note 2)
1.6 (Note 1)
2.5 (Note 2)
618 (Note 1)
403 (Note 2)
280 (Note 1)
332 (Note 2)
−55 to +150
Value
Max
100
50
50
1
mAdc
°C/W
°C/W
°C/W
Unit
Unit
Vdc
Vdc
mW
°C
See specific ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
(INPUT)
*Date Code orientation may vary depending
(Note: Microdot may be in either location)
upon manufacturing location.
BASE
PIN 1
ORDERING INFORMATION
BIAS RESISTOR
6x
M
G
MARKING DIAGRAM
TRANSISTORS
http://onsemi.com
PNP SILICON
SC−70/SOT−323
R
R
= Device Code
= Date Code*
= Pb−Free Package
1
2
1
CASE 419
STYLE 3
6x M G
2
Publication Order Number:
G
3
PIN 2
EMITTER
(GROUND)
PIN 3
COLLECTOR
(OUTPUT)
MUN5111T1/D

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MUN5111T1 Summary of contents

Page 1

... MUN5111T1 Series Bias Resistor Transistors PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors ...

Page 2

... ORDERING INFORMATION AND RESISTOR VALUES Device Package MUN5111T1G SC−70/SOT−323 (Pb−Free) MUN5112T1G SC−70/SOT−323 (Pb−Free) MUN5113T1G SC−70/SOT−323 (Pb−Free) MUN5113T3G SC−70/SOT−323 (Pb−Free) MUN5113T1G SC−70/SOT−323 (Pb−Free) MUN5114T1G SC−70/SOT−323 (Pb−Free) MUN5115T1G (Note 3) SC−70/SOT−323 (Pb−Free) MUN5116T1G (Note 3) SC−70/SOT−323 (Pb− ...

Page 3

... FE MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 = 0.3 mA CE(sat) MUN5130T1/MUN5131T1 MUN5115T1/MUN5116T1 MUN5111T1 MUN5112T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5113T1 MUN5136T1 MUN5137T1 http://onsemi.com 3 Min Typ Max Unit − − 100 nAdc − ...

Page 4

... Input Resistor Resistor Ratio MUN5111T1/MUN5112T1/MUN5113T1/MUN5136T1 MUN5130T1/MUN5131T1/MUN5132T1 250 200 150 100 25°C unless otherwise noted) (Continued) A Symbol = 1.0 kW MUN5130T1 MUN5115T1 MUN5116T1 MUN5131T1 MUN5132T1 R1 MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 MUN5114T1 MUN5115T1/MUN5116T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5137T1 R = 833° ...

Page 5

... TYPICAL ELECTRICAL CHARACTERISTICS − MUN5111T1 -25°C A 0.1 75°C 0. COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat REVERSE BIAS VOLTAGE (VOLTS) R Figure 4. Output Capacitance 100 0.1 0 Figure 6. Input Voltage versus Output Current 1000 100 25° 100 75° MHz 25° 0.1 0.01 0.001 40 50 ...

Page 6

TYPICAL ELECTRICAL CHARACTERISTICS − MUN5112T1 -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS − MUN5113T1 -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat) 1 0.8 0.6 0.4 0 ...

Page 8

TYPICAL ELECTRICAL CHARACTERISTICS − MUN5114T1 0.1 75°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1.5 1 ...

Page 9

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5132T1 1 0.1 0. COLLECTOR CURRENT (mA) C Figure 23. Maximum Collector Voltage versus Collector Current ...

Page 10

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5133T1 0.1 −25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 28. V versus I CE(sat ...

Page 11

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5136T1 1 0.1 −25°C 0. COLLECTOR CURRENT (mA) C Figure 33. Maximum Collector Voltage versus Collector Current 1.2 1.0 0.8 0.6 0.4 0 ...

Page 12

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5137T1 −25°C A 0.1 25°C 0. COLLECTOR CURRENT (mA) C Figure 38. Maximum Collector Voltage versus Collector Current 1.4 1.2 1.0 0.8 0.6 0.4 ...

Page 13

... H 2.00 2.10 2.40 0.079 0.083 E STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MUN5111T1/D MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 ...

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