MUN5334DW1T1 ON Semiconductor, MUN5334DW1T1 Datasheet

Digital Transistors 100mA Complementary

MUN5334DW1T1

Manufacturer Part Number
MUN5334DW1T1
Description
Digital Transistors 100mA Complementary
Manufacturer
ON Semiconductor
Datasheet
1.MUN5312DW1T2.pdf (34 pages)

Specifications of MUN5334DW1T1

Configuration
Dual
Transistor Polarity
NPN/PNP
Typical Input Resistor
22 KOhm
Typical Resistor Ratio
0.47
Mounting Style
SMD/SMT
Package / Case
SC-88
Collector- Emitter Voltage Vceo Max
50 V
Continuous Collector Current
0.1 A
Peak Dc Collector Current
100 mA
Power Dissipation
187 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MUN5334DW1T1G
Manufacturer:
ON
Quantity:
30 000
MUN5311DW1T1G Series
Dual Bias Resistor
Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
i n t e g r a t i n g
MUN5311DW1T1G series, two complementary BRT devices are
housed in the SOT−363 package which is ideal for low power surface
mount applications where board space is at a premium.
Features
•
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
MAXIMUM RATINGS
and Q
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 12
THERMAL CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Device Dissipation
Derate above 25°C
Thermal Resistance −
Total Device Dissipation
Derate above 25°C
Thermal Resistance −
Thermal Resistance −
Junction and Storage Temperature
The Bias Resistor Transistor (BRT) contains a single transistor with
Compliant
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and Reel
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
T
Junction-to-Ambient
T
Junction-to-Ambient
Junction-to-Lead
A
A
(Both Junctions Heated)
2
(One Junction Heated)
, − minus sign for Q
= 25°C
= 25°C
Characteristic
Characteristic
Rating
t h e m
(T
1
A
(PNP) omitted)
i n t o
= 25°C unless otherwise noted, common for Q
Preferred Devices
a
Symbol
Symbol
Symbol
T
V
V
R
R
R
J
P
P
CBO
CEO
, T
s i n g l e
I
qJA
qJA
qJL
C
D
D
stg
187 (Note 1)
256 (Note 2)
670 (Note 1)
490 (Note 2)
250 (Note 1)
385 (Note 2)
493 (Note 1)
325 (Note 2)
188 (Note 1)
208 (Note 2)
−55 to +150
1.5 (Note 1)
2.0 (Note 2)
2.0 (Note 1)
3.0 (Note 2)
d e v i c e .
Value
Max
Max
100
50
50
I n
mW/°C
mW/°C
1
mAdc
°C/W
°C/W
°C/W
Unit
Unit
Unit
mW
mW
Vdc
Vdc
°C
t h e
1
Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering, shipping, and specific marking
information in the table on page 2 of this data sheet.
ORDERING AND DEVICE MARKING
xx
M
G
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
(3)
(4)
Q
1
MARKING DIAGRAM
http://onsemi.com
http://onsemi.com
= Device Code
= Date Code*
= Pb−Free Package
R
INFORMATION
2
6
1
CASE 419B
SOT−363
6
STYLE 1
(5)
R
xx M G
1
Publication Order Number:
R
(2)
G
1
1
MUN5311DW1T1/D
R
2
Q
(1)
(6)
2

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MUN5334DW1T1 Summary of contents

Page 1

... The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by ...

Page 2

... SOT−363 (Pb−Free) MUN5332DW1T1G SOT−363 (Pb−Free) MUN5333DW1T1G SOT−363 (Pb−Free) MUN5334DW1T1G SOT−363 (Pb−Free) MUN5335DW1T1G SOT−363 (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...

Page 3

... Q (PNP) omitted Symbol = CBO = CEO MUN5311DW1T1G I EBO MUN5312DW1T1G MUN5313DW1T1G MUN5314DW1T1G MUN5315DW1T1G MUN5316DW1T1G MUN5330DW1T1G MUN5331DW1T1 G MUN5332DW1T1G MUN5333DW1T1 G MUN5334DW1T1G MUN5335DW1T1G = 0) V (BR)CBO E = 2.0 mA (BR)CEO http://onsemi.com 3 Min Typ Max Unit − − 100 nAdc − − 500 nAdc − − ...

Page 4

... MUN5333DW1T1G MUN5334DW1T1G V OL MUN5311DW1T1G MUN5312DW1T1G MUN5314DW1T1G MUN5315DW1T1G MUN5316DW1T1G MUN5330DW1T1G MUN5331DW1T1G MUN5332DW1T1G MUN5333DW1T1G MUN5334DW1T1G MUN5335DW1T1G MUN5313DW1T1G V OH MUN5311DW1T1G MUN5312DW1T1G MUN5313DW1T1G MUN5314DW1T1G MUN5333DW1T1G MUN5334DW1T1G MUN5335DW1T1G MUN5330DW1T1G MUN5315DW1T1G MUN5316DW1T1G MUN5331DW1T1G MUN5332DW1T1G http://onsemi.com 4 Min Typ Max Unit 35 60 − 60 100 − 80 140 − 80 140 − ...

Page 5

... Q , − minus sign for Q (PNP) omitted) (Continued Symbol MUN5311DW1T1G MUN5312DW1T1G MUN5313DW1T1G MUN5314DW1T1G MUN5315DW1T1G MUN5316DW1T1G MUN5330DW1T1G MUN5331DW1T1G MUN5332DW1T1G MUN5333DW1T1G MUN5334DW1T1G MUN5335DW1T1G R1/R2 ALL MUN5311DW1T1G SERIES DEVICES R = 490°C/W qJA 0 50 100 T , AMBIENT TEMPERATURE (°C) A Figure 1. Derating Curve http://onsemi.com 5 Min Typ ...

Page 6

TYPICAL ELECTRICAL CHARACTERISTICS − MUN5311DW1T1G NPN TRANSISTOR 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS − MUN5311DW1T1G PNP TRANSISTOR -25°C A 0.1 75°C 0. COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat ...

Page 8

TYPICAL ELECTRICAL CHARACTERISTICS − MUN5312DW1T1G NPN TRANSISTOR -25°C A 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat ...

Page 9

TYPICAL ELECTRICAL CHARACTERISTICS − MUN5312DW1T1G PNP TRANSISTOR -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat ...

Page 10

TYPICAL ELECTRICAL CHARACTERISTICS − MUN5313DW1T1G NPN TRANSISTOR -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 22. V versus I CE(sat) 1 0.8 0.6 0.4 0.2 ...

Page 11

TYPICAL ELECTRICAL CHARACTERISTICS − MUN5313DW1T1G PNP TRANSISTOR -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 27. V versus I CE(sat) 1 0.8 0.6 0.4 0.2 ...

Page 12

TYPICAL ELECTRICAL CHARACTERISTICS − MUN5314DW1T1G NPN TRANSISTOR 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 32. V versus I CE(sat) 4 3.5 3 2.5 2 1.5 1 0.5 ...

Page 13

TYPICAL ELECTRICAL CHARACTERISTICS − MUN5314DW1T1G PNP TRANSISTOR 0.1 75°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 37. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 ...

Page 14

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW1T1G NPN TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 42. V versus I CE(sat ...

Page 15

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW1T1G PNP TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 47. V versus I CE(sat) 4.5 4 3.5 3 2.5 ...

Page 16

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5316DW1T1G NPN TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 52. V versus I CE(sat ...

Page 17

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5316DW1T1G PNP TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 57. V versus I CE(sat) 4.5 4 3.5 3 2.5 ...

Page 18

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5330DW1T1G NPN TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 62. V versus I CE(sat) 100 75°C 10 25°C 1 ...

Page 19

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5330DW1T1G PNP TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 66. V versus I CE(sat) 4.5 4 3.5 3 2.5 ...

Page 20

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5331DW1T1G NPN TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 71. V versus I CE(sat ...

Page 21

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5331DW1T1G PNP TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 76. V versus I CE(sat) 4.5 4 3.5 3 2.5 ...

Page 22

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5332DW1T1G NPN TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 81. V versus I CE(sat ...

Page 23

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5332DW1T1G PNP TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 86. V versus I CE(sat ...

Page 24

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5333DW1T1G NPN TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 91. V versus I CE(sat) 4 3.5 3 2.5 2 ...

Page 25

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5333DW1T1G PNP TRANSISTOR 0.1 −25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 96. V versus I CE(sat ...

Page 26

... TYPICAL ELECTRICAL CHARACTERISTICS — MUN5334DW1T1G NPN TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 101. V CE(sat) 3.5 3 2.5 2 1 REVERSE BIAS VOLTAGE (VOLTS) R Figure 103. Output Capacitance 100 75°C 0.1 0 Figure 105. Input Voltage versus Output ...

Page 27

... TYPICAL ELECTRICAL CHARACTERISTICS — MUN5334DW1T1G PNP TRANSISTOR 0.1 75°C −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 106. V CE(sat) 1000 100 versus I C http://onsemi.com 75° −25°C A 25° COLLECTOR CURRENT (mA) C Figure 107. DC Current Gain 100 ...

Page 28

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5335DW1T1G NPN TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 108. V CE(sat ...

Page 29

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5335DW1T1G PNP TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 113. V CE(sat) 4.5 4 3.5 3 2.5 2 1.5 ...

Page 30

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5336DW1T1G NPN TRANSISTOR 1 0.1 −25°C 0. COLLECTOR CURRENT (mA) C Figure 118. V CE(sat) 1.2 1.0 0.8 0.6 0.4 0 ...

Page 31

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5336DW1T1G PNP TRANSISTOR −25° 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 123. V CE(sat) 5 4.5 4 3.5 3 2.5 2 1.5 ...

Page 32

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5337DW1T1G NPN TRANSISTOR −25°C A 0.1 25°C 0. COLLECTOR CURRENT (mA) C Figure 128. V CE(sat) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 ...

Page 33

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5337DW1T1G PNP TRANSISTOR 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 133. V CE(sat) 5 4.5 4 3.5 3 2.5 2 1.5 1 ...

Page 34

... SC−88/SC70−6/SOT−363 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: ...

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