DTA114EET1 ON Semiconductor, DTA114EET1 Datasheet

Digital Transistors 100mA 50V BRT PNP

DTA114EET1

Manufacturer Part Number
DTA114EET1
Description
Digital Transistors 100mA 50V BRT PNP
Manufacturer
ON Semiconductor
Datasheet

Specifications of DTA114EET1

Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
10 KOhms
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Package / Case
SC-75-3
Collector- Emitter Voltage Vceo Max
50 V
Continuous Collector Current
0.1 A
Peak Dc Collector Current
100 mA
Power Dissipation
0.2 W
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DTA114EET1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
DTA114EET1G
Manufacturer:
ON
Quantity:
4 498
Part Number:
DTA114EET1G
Manufacturer:
ON/安森美
Quantity:
20 000
DTA114EET1 Series
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space. The device is housed in
the SC−75/SOT−416 package which is designed for low power
surface mount applications.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 × 1.0 Inch Pad.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 6
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Device Dissipation, FR−4 Board
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation, FR−4 Board
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
This new series of digital transistors is designed to replace a single
The modified gull−winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC−75/SOT−416 package can be soldered using wave or reflow.
Pb−Free Packages are Available
(Note 1) @ T
Derate above 25°C
(Note 1)
(Note 2) @ T
Derate above 25°C
(Note 2)
A
A
= 25°C
= 25°C
Rating
Rating
(T
A
= 25°C unless otherwise noted)
Preferred Devices
Symbol
Symbol
T
V
V
R
R
J
P
P
, T
CBO
CEO
I
qJA
qJA
C
D
D
stg
−55 to
Value
Value
+150
100
200
600
300
400
1.6
2.4
50
50
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
mW
mW
°C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*Date Code orientation may vary depending
upon manufacturing location.
RESISTOR TRANSISTORS
(INPUT)
(Note: Microdot may be in either location)
BASE
PIN 1
xx
M
G
ORDERING INFORMATION
PNP SILICON BIAS
MARKING DIAGRAM
http://onsemi.com
SC−75 (SOT−416)
R1
= Specific Device Code
= Date Code*
= Pb−Free Package
R2
CASE 463
xx = (Refer to page 2)
STYLE 1
3
xx M G
1
Publication Order Number:
G
2
(GROUND)
EMITTER
COLLECTOR
PIN 2
(OUTPUT)
DTA114EET1/D
PIN 3

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DTA114EET1 Summary of contents

Page 1

... DTA114EET1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors ...

Page 2

... DTA124XET1 6L DTA124XET1G DTA123JET1 6M DTA123JET1G DTA115EET1 6N DTA115EET1G DTA144WET1 6P DTA144WET1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DTA114EET1 Series R1 (K) R2 (K) Package SC− SC−75 (Pb−Free) SC− SC−75 (Pb−Free) SC− ...

Page 3

... 1 1 1 1.0 kW Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% DTA114EET1 Series (T = 25°C unless otherwise noted DTA114EET1 DTA124EET1 DTA144EET1 DTA114YET1 DTA114TET1 DTA143TET1 DTA123EET1 DTA143EET1 DTA143ZET1 DTA124XET1 DTA123JET1 DTA115EET1 DTA144WET1 = 25°C unless otherwise noted) A DTA114EET1 ...

Page 4

... ON CHARACTERISTICS (Note 6) Output Voltage (off 1.0 kW Input Resistor Resistor Ratio 6. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% DTA114EET1 Series (T = 25°C unless otherwise noted) (continued 1.0 kW) L DTA114TET1 DTA143TET1 DTA123EET1 DTA143EET1 DTA114EET1 DTA124EET1 DTA144EET1 DTA114YET1 DTA114TET1 DTA143TET1 DTA123EET1 ...

Page 5

... D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 Figure 2. Normalized Thermal Response DTA114EET1 Series R = 600°C/W qJA 0 50 100 150 T , AMBIENT TEMPERATURE (°C) A Figure 1. Derating Curve 0.01 0.1 1.0 t, TIME (s) http://onsemi.com 5 10 ...

Page 6

... TYPICAL ELECTRICAL CHARACTERISTICS − DTA114EET1 −25°C A 0.1 75°C 0. COLLECTOR CURRENT (mA) C Figure 3. V versus I CE(sat REVERSE BIAS VOLTAGE (VOLTS) R Figure 5. Output Capacitance 100 0.1 0 Figure 7. Input Voltage versus Output Current DTA114EET1 Series 1000 100 25° 100 MHz 25° 0.1 0.01 ...

Page 7

... I , COLLECTOR CURRENT (mA) C Figure 8. V versus I CE(sat REVERSE BIAS VOLTAGE (VOLTS) R Figure 10. Output Capacitance 10 1 75°C 0.1 0 Figure 12. Input Voltage versus Output Current DTA114EET1 Series 1000 75°C 100 100 MHz 75° 25° 0.1 0.01 0.001 Figure 11. Output Current versus Input Voltage T = − ...

Page 8

... I , COLLECTOR CURRENT (mA) C Figure 13. V versus I CE(sat REVERSE BIAS VOLTAGE (VOLTS) R Figure 15. Output Capacitance 100 10 1 0.1 0 Figure 17. Input Voltage versus Output Current DTA114EET1 Series 1000 25°C 100 75° 100 75° MHz 25° 0.1 0.01 0.001 Figure 16. Output Current versus Input Voltage ...

Page 9

... I , COLLECTOR CURRENT (mA) C Figure 18. V versus I CE(sat) 1 0.8 0.6 0.4 0 REVERSE BIAS VOLTAGE (VOLTS) R Figure 20. Output Capacitance 100 10 1 0.1 0 Figure 22. Input Voltage versus Output Current DTA114EET1 Series 1000 25°C 75°C 100 100 MHz 25° 0.1 0.01 0.001 Figure 21. Output Current versus Input Voltage ...

Page 10

... V , REVERSE BIAS VOLTAGE (VOLTS) R Figure 25. Output Capacitance 0 −25°C A 75° COLLECTOR CURRENT (mA) C Figure 27. Input Voltage versus Output Current DTA114EET1 Series 180 160 CE = −25°C A 140 25°C 120 100 100 MHz 25° Figure 26. Output Current versus Input Voltage 25° ...

Page 11

... I , COLLECTOR CURRENT (mA) C Figure 29. Maximum Collector Voltage versus Collector Current 1.2 1.0 0.8 0.6 0.4 0 REVERSE BIAS VOLTAGE (VOLTS) R Figure 31. Output Capacitance 100 25° Figure 33. Input Voltage versus Output Current DTA114EET1 Series 1000 100 75°C 25° 100 MHz 25° 0 Figure 32. Output Current versus Input Voltage T = − ...

Page 12

... Figure 34. Maximum Collector Voltage versus Collector Current 1.4 1.2 1.0 0.8 0.6 0.4 0 REVERSE BIAS VOLTAGE (VOLTS) R Figure 36. Output Capacitance 100 10 25° Figure 38. Input Voltage versus Output Current DTA114EET1 Series 1000 75°C 100 Figure 35. DC Current Gain 100 MHz 25°C ...

Page 13

... Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com DTA114EET1 Series PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463−01 ISSUE F e − ...

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