MMBZ5257BLT1G ON Semiconductor, MMBZ5257BLT1G Datasheet - Page 6

• Manufacturer Part Number: MMBZ5257BLT1G
• Description: DIODE ZENER 33V 225MW SOT-23
• Manufacturer: ON Semiconductor
• Type: Voltage Regulatorr

Specifications of MMBZ5257BLT1G

• Voltage - Zener (nom) (vz): 33V
• Voltage - Forward (vf) (max) @ If: 900mV @ 10mA
• Current - Reverse Leakage @ Vr: 100µA @ 25V
• Power - Max: 225mW
• Impedance (max) (zzt): 58 Ohm
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Operating Temperature: -65°C ~ 150°C
• Number Of Elements: Single
• Package Type: SOT-23
• Zener Voltage (typ): 33V
• Zener Test Current: 3.8mA
• Voltage Tolerance: 5%
• Power Dissipation: 300mW
• Knee Impedance: 58Ohm
• Operating Temperature Classification: Military
• Rev Curr: 100nA
• Mounting: Surface Mount
• Pin Count: 3
• Operating Temp Range: -65C to 150C
• Zener Voltage: 33 V
• Zener Current: 10 mA
• Maximum Reverse Leakage Current: 0.1 uA
• Maximum Zener Impedance: 58 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Tolerance: -
• Lead Free Status / Rohs Status: Compliant
• Other names: MMBZ5257BLT1GOSTR

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b
1
e
D
3
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
2
A1
E
H
A
*For additional information on our Pb−Free strategy and soldering
E
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
0.037
L
0.95
0.035
0.9
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
MMBZ5221BLT1 Series
0.031
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
0.8
http://onsemi.com
SOT−23 (TO−236)
CASE 318−08
C
ISSUE AL
6
SCALE 10:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
0.037
Y14.5M, 1982.
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
STANDARD 318−08.
0.95
DIM
A1
H
A
b
D
E
c
e
L
E
0.079
2.0
inches
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.35
2.10
mm
MILLIMETERS
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.54
2.40
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
MAX
0.10
0.50
0.18
3.04
1.40
2.04
0.69
2.64
1.11
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.014
0.083
MIN
MMBZ5221BLT1/D
INCHES
0.040
0.002
0.018
0.005
0.051
0.075
0.021
0.094
NOM
0.114
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.029
0.104
MAX