BZX79-C12,133 NXP Semiconductors, BZX79-C12,133 Datasheet - Page 7

• Manufacturer Part Number: BZX79-C12,133
• Description: DIODE ZENER 12V 500MW DO-35
• Manufacturer: NXP Semiconductors

Specifications of BZX79-C12,133

• Package / Case: DO-204AH, DO-35, Axial
• Mounting Type: Through Hole
• Power - Max: 500mW
• Tolerance: ±5%
• Current - Reverse Leakage @ Vr: 100nA @ 8V
• Voltage - Forward (vf) (max) @ If: 900mV @ 10mA
• Voltage - Zener (nom) (vz): 12V
• Impedance (max) (zzt): 25 Ohm
• Zener Voltage: 12.05 V
• Voltage Tolerance: 5 %
• Voltage Temperature Coefficient: 8.4 mV / K
• Power Dissipation: 500 mW
• Maximum Reverse Leakage Current: 0.1 uA
• Maximum Zener Impedance: 25 Ohms
• Maximum Operating Temperature: + 200 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-3845-4::933117810133::BZX79-C12 AMO

NXP Semiconductors
2002 Feb 27
handbook, halfpage
handbook, halfpage
Voltage regulator diodes
(mV/K)
(1) T
(2) T
Fig.3
BZX79-B/C2V4 to BZX79-B/C4V3.
T
Fig.5
P ZSM
j
S Z
(W)
= 25 to 150 °C.
10
10
10
−1
−2
−3
j
j
0
1
10
3
2
= 25 °C (prior to surge).
= 150 °C (prior to surge).
0
−1
Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
Temperature coefficient as a function of
working current; typical values.
20
1
(1)
(2)
4V3
duration (ms)
40
3V9
2V4
2V7
3V3
I Z (mA)
3V6
MBG801
MBG783
3V0
10
60
7
handbook, halfpage
handbook, halfpage
(mV/K)
T
Fig.4
BZX79-B/C4V7 to BZX79-B/C12.
T
Fig.6
j
j
S Z
(mA)
= 25 °C.
= 25 to 150 °C.
I F
300
200
100
10
−5
0
5
0
0.6
0
Typical forward current as a function of
forward voltage.
Temperature coefficient as a function of
working current; typical values.
4
8
9V1
8V2
7V5
6V8
0.8
12
11
10
12
BZX79 series
6V2
5V6
5V1
4V7
V F (V)
Product data sheet
16
I Z (mA)
MBG781
MBG782
20
1