BAS21LT3 ON Semiconductor, BAS21LT3 Datasheet - Page 5

Diodes (General Purpose, Power, Switching) 250V 200mA

BAS21LT3

Manufacturer Part Number
BAS21LT3
Description
Diodes (General Purpose, Power, Switching) 250V 200mA
Manufacturer
ON Semiconductor
Datasheet

Specifications of BAS21LT3

Product
Switching Diodes
Peak Reverse Voltage
250 V
Forward Continuous Current
0.2 A
Max Surge Current
0.625 A
Configuration
Single
Recovery Time
50 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
- 55 C to + 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
SOT-23-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAS21LT3G
Manufacturer:
ON
Quantity:
30 000
V
D
1
A
G
3
L
BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1
2
H
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
B
S
C
0.037
0.95
0.035
0.9
0.031
SOLDERING FOOTPRINT*
PACKAGE DIMENSIONS
0.8
http://onsemi.com
SOT−23 (TO−236)
CASE 318−09
ISSUE AH
K
5
SCALE 10:1
J
0.037
0.95
0.079
inches
2.0
mm
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD
4. 318−01, −02, AND −06 OBSOLETE, NEW
Y14.5M, 1982.
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
STANDARD 318−09.
DIM
A
B
C
D
G
H
K
L
S
V
J
STYLE 8:
PIN 1. ANODE
0.1102
0.0472
0.0385
0.0140
0.0670
0.0040
0.0034
0.0180
0.0350
0.0830
0.0177
MIN
2. NO CONNECTION
3. CATHODE
INCHES
0.0551
0.0498
0.0200
0.0826
0.0098
0.0070
0.0236
0.0401
0.0984
0.0236
0.1197
MAX
0.085
MILLIMETERS
MIN
2.80
1.20
0.99
0.36
1.70
0.10
0.45
0.89
2.10
0.45
MAX
0.177
3.04
1.40
1.26
0.50
2.10
0.25
0.60
1.02
2.50
0.60

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