MMBD914LT3 ON Semiconductor, MMBD914LT3 Datasheet - Page 2

Diodes (General Purpose, Power, Switching) 100V 200mA

MMBD914LT3

Manufacturer Part Number
MMBD914LT3
Description
Diodes (General Purpose, Power, Switching) 100V 200mA
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMBD914LT3

Product
Switching Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
0.5 A
Max Surge Current
0.5 A
Configuration
Single
Recovery Time
4 ns
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
5 uA
Maximum Power Dissipation
225 mW
Operating Temperature Range
- 55 C to + 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
SOT-23-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Part Number
Manufacturer
Quantity
Price
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Manufacturer:
ON Semiconductor
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Manufacturer:
ON Semiconductor
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+10 V
100
1.0
0.1
50 W OUTPUT
10
GENERATOR
0.2
PULSE
820 W
0.1 mF
0.4
Figure 2. Forward Voltage
2.0 k
100 mH
V
F
T
, FORWARD VOLTAGE (VOLTS)
A
= 85°C
0.6
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
Notes:
Notes:
I
F
0.68
0.64
0.60
0.56
0.52
DUT
2. Input pulse is adjusted so I
3. t
0
Figure 1. Recovery Time Equivalent Test Circuit
0.8
p
» t
T
A
rr
= 25°C
0.1 mF
OSCILLOSCOPE
T
50 W INPUT
A
SAMPLING
1.0
2.0
= −40°C
V
R
Figure 4. Capacitance
, REVERSE VOLTAGE (VOLTS)
http://onsemi.com
MMBD914LT1
1.2
4.0
R(peak)
V
2
R
0.001
0.01
t
r
1.0
0.1
is equal to 10 mA.
10
INPUT SIGNAL
10%
90%
0
6.0
t
p
10
t
Figure 3. Leakage Current
V
R
, REVERSE VOLTAGE (VOLTS)
8.0
T
T
T
T
T
F
A
A
20
A
A
A
) of 10 mA.
I
= 150°C
= 125°C
I
= 85°C
= 55°C
= 25°C
R
F
(I
F
30
= I
at i
R
OUTPUT PULSE
= 10 mA; MEASURED
R(REC)
t
rr
i
R(REC)
= 1.0 mA)
40
= 1.0 mA
t
50

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