IXGF25N250 IXYS, IXGF25N250 Datasheet - Page 3

• Manufacturer Part Number: IXGF25N250
• Description: IGBT Transistors I4-Pak
• Manufacturer: IXYS

Specifications of IXGF25N250

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 2500 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: ISOPLUS I4-PAC-3
• Continuous Collector Current Ic Max: 30 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Vces, (v): 2500
• Ic25, Tc=25°c, Igbt, (a): 30
• Ic110, Tc=110°c, Igbt, (a): 15
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.9
• Tfi, Typ, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Rthjc, Max, Igbt, (k/w): 1.1
• Package Style: ISOPLUS i4-Pak
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2009 IXYS CORPORATION, All Rights Reserved
150
135
120
105
200
180
160
140
120
100
90
75
60
45
30
15
10
80
60
40
20
0
9
8
7
6
5
4
3
0
0
7
0
8
1
2
9
Fig. 5. Collector-to-Emitter Voltage
2
4
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
vs. Gate-to-Emitter Voltage
10
3
6
11
V
V
V
V
CE
GE
GE
CE
@ 125ºC
= 25V
- Volts
@ 25ºC
- Volts
- Volts
20V
12
4
8
V
GE
= 25V
20V
13
15V
10V
10
5
14
15V
10V
12
6
I
I
I
C
C
C
V
15
GE
= 50A
= 150A
= 100A
= 15V
14
7
16
17
16
8
200
180
160
140
120
100
250
225
200
175
150
125
100
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
80
60
40
20
75
50
25
0
0
-50
4
0
V
GE
2
5
-25
= 15V
Fig. 2. Extended Output Characteristics
4
V
6
GE
Fig. 4. Dependence of V
0
= 25V
20V
6
Fig. 6. Input Admittance
Junction Temperature
7
T
J
25
- Degrees Centigrade
15V
10V
8
V
V
CE
GE
8
@ 25ºC
- Volts
- Volts
10
50
IXGF25N250
T
9
I
J
C
12
= - 40ºC
= 150A
75
125ºC
25ºC
I
CE(sat)
C
10
= 100A
14
I
C
= 50A
100
IXYS REF: G_25N250(5P-P528)4-21-08-E
on
11
16
125
12
18
20
150
13