IXGK100N170 IXYS, IXGK100N170 Datasheet
IXGK100N170
Specifications of IXGK100N170
Related parts for IXGK100N170
IXGK100N170 Summary of contents
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... CES CE CES GE = ±20V 0V, V GES 100A 15V, Note 1 CE(sat © 2012 IXYS CORPORATION, All Rights Reserved IXGK100N170 IXGX100N170 Maximum Ratings 1700 = 1MΩ 1700 GE ±20 ±30 170 160 100 600 = 1Ω 200 G CM @0.8 • V CES = 125° 830 -55 ... +150 150 -55 ... +150 ...
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... Typ 9200 455 150 425 = 0.5 • CES 186 35 192 285 Ω 395 35 250 285 Ω 435 0.15 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGK100N170 IXGX100N170 TO-264 Outline Max Terminals Gate 2,4 = Collector 3 = Emitter 0.15 °C/W ° ...
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... T = 25ºC J 140 120 100 4.0 IXGK100N170 IXGX100N170 Fig. 2. Extended Output Characteristics @ 15V GE 13V 11V Volts CE Fig. 4. Dependence of V CE(sat) Junction Temperature V = 15V GE I =200A 100A 50A C -25 ...
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... Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXGK100N170 IXGX100N170 Fig. 8. Gate Charge V = 850V 100A 10mA 100 150 200 250 Q - NanoCoulombs G Fig. 10. Capacitance MHz ...
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... G GE 380 900 = 850V CE 360 800 340 700 T = 125ºC J 320 600 300 500 400 280 260 300 100 IXGK100N170 IXGX100N170 Fig. 13. Resistive Turn-on Rise Time vs. Collector Current R = 1Ω 15V 850V 125º Amperes C Fig. 15. Resistive Turn-off Switching Times vs. Junction Temperature ...