50MT060ULSTAPBF Vishay, 50MT060ULSTAPBF Datasheet

IGBT Transistors 600 Volt 100 Amp Low Side Chopper

50MT060ULSTAPBF

Manufacturer Part Number
50MT060ULSTAPBF
Description
IGBT Transistors 600 Volt 100 Amp Low Side Chopper
Manufacturer
Vishay
Datasheet

Specifications of 50MT060ULSTAPBF

Package / Case
MTP-14
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
100 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Power Dissipation Pd
445W
Collector Emitter Voltage V(br)ceo
600V
Continuous Collector Current Ic
100A
Leaded Process Compatible
Yes
Collector Emitter Saturation Voltage Vce(sat)
2.55V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document Number: 94540
Revision: 01-Mar-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Peak switching current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation
"Low Side Chopper" IGBT MTP (Ultrafast Speed IGBT), 100 A
V
I
V
C
CE(on)
CES
DC
MTP
Diode
IGBT
For technical questions, contact:
SYMBOL
V
V
1.68 V
V
600 V
100 A
I
I
I
P
ISOL
CES
CM
I
LM
FM
I
C
GE
F
D
T
T
T
Any terminal to case, t = 1 minute
T
T
T
T
C
C
C
C
C
C
C
= 25 °C
= 122 °C
= 100 °C
= 25 °C
= 100 °C
= 25 °C
= 100 °C
TEST CONDITIONS
FEATURES
• Generation 4 ultrafast speed IGBT technology
• HEXFRED
• Very low conduction and switching losses
• Optional SMD thermistor (NTC)
• Al
• Very low stray inductance design for high speed operation
• UL approved file E78996
• Speed 8 kHz to 60 kHz > 20 kHz hard switching, > 200 kHz
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
indmodules@vishay.com
recovery
resonant mode
2
O
3
DBC
®
Vishay High Power Products
diode
50MT060ULSTAPbF
with
MAX.
2500
± 20
600
100
200
200
200
445
175
205
50
48
83
ultrasoft
reverse
www.vishay.com
UNITS
W
V
A
V
1

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50MT060ULSTAPBF Summary of contents

Page 1

... Any terminal to case minute ISOL ° 100 ° ° 100 °C C For technical questions, contact: indmodules@vishay.com 50MT060ULSTAPbF Vishay High Power Products ® diode with ultrasoft reverse DBC MAX. 600 100 50 200 200 48 200 ± 20 2500 445 175 205 83 www.vishay.com UNITS V A ...

Page 2

... Vishay High Power Products ELECTRICAL SPECIFICATIONS (T PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Diode reverse breakdown voltage Temperature coefficient of threshold voltage Forward transconductance Collector to emitter leaking current Diode forward voltage drop Gate to emitter leakage current SWITCHING CHARACTERISTICS (T ...

Page 3

... Heatsink compound thermal conductivity = 1 W/mK thCS A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the compound. Lubricated threads Frequency ( kHz ) For technical questions, contact: indmodules@vishay.com 50MT060ULSTAPbF Vishay High Power Products MIN. TYP. MAX 4000 MIN. ...

Page 4

... Vishay High Power Products 100 T = 150° 25° Vge = 15V 380 μ s Pulse Width 1 0.6 1.0 1 Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics 1000 150°C 100 25°C 10 50V 20µs PULSE WIDTH 1.0 5.0 5.5 6 Gate-to-Emitter Voltage (V) Fig Typical Transfer Characteristics ...

Page 5

... J τ Ci= τi/Ri Ci 0.0001 0.001 Rectangular Pulse Duration (sec SHORTED ce 1000 Fig Typical Switching Losses vs. Gate Resistance 300 400 Fig Typical Switching Losses vs. Junction Temperature For technical questions, contact: indmodules@vishay.com 50MT060ULSTAPbF Vishay High Power Products τi (sec) Ri (°C/ τ 0.200 0.000993 C ? τ ...

Page 6

... Vishay High Power Products 5.0 Ω 125 ° 480 Collector Current (A) Fig Typical Switching Losses vs. Collector to Emitter Current 1000 20V 125°C 100 10 SAFE OPERATING AREA 100 Collector-to-Emitter Voltage (V) Fig. 1 Turn-Off SOA www.vishay.com 6 "Low Side Chopper" IGBT MTP (Ultrafast Speed IGBT), 100 A ...

Page 7

... Fig Typical dI /dt vs. dI (rec Thermistor Fig Electrical diagram For technical questions, contact: indmodules@vishay.com 50MT060ULSTAPbF Vishay High Power Products 2000 100A 50A 1600 25A 1200 800 400 480V 125° 25°C 0 100 200 300 400 ...

Page 8

... Vishay High Power Products ORDERING INFORMATION TABLE Device code CIRCUIT CONFIGURATION Dimensions www.vishay.com 8 "Low Side Chopper" IGBT MTP (Ultrafast Speed IGBT), 100 A MT 060 Current rating ( Essential part number - Voltage rating (060 = 600 V) - Speed/type (U = Ultrafast IGBT) - Circuit configuration (LS = Low side chopper) ...

Page 9

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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