HT11G Taiwan Semiconductor, HT11G Datasheet - Page 2

• Manufacturer Part Number: HT11G
• Description: Rectifiers 1.0 Amp 50 Volt 30 Amp IFSM
• Manufacturer: Taiwan Semiconductor

Specifications of HT11G

• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 50 V
• Forward Voltage Drop: 1 V
• Recovery Time: 50 ns
• Forward Continuous Current: 1 A
• Max Surge Current: 30 A
• Reverse Current Ir: 5 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Package / Case: TS-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: R0

2.0
1.0
70
60
50
40
30
20
10
0
40
35
30
25
20
15
10
0
0
0
FIG.1- MAXIMUM FORWARD CURRENT DERATING
FIG.4- TYPICAL JUNCTION CAPACITANCE
0.1
FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE
1
CURVE
25
CURRENT
0.5
2
RATINGS AND CHARACTERISTIC CURVES (HT11G THRU HT18G)
1
50
REVERSE VOLTAGE. (V)
NUMBER OF CYCLES AT 60Hz
50
NONINDUCTIVE
2
AMBIENT TEMPERATURE. ( C)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
5
(+)
50Vdc
(approx)
(-)
NOTES: 1. Rise Time=7ns max. Input Impedance=
75
5
10
2. Rise Time=10ns max. Sourse Impedance=
Tj=25 C
10
100
8.3ms Single Half Sine Wave
JEDEC Method
NON
INDUCTIVE
1 megohm 22pf
50 ohms
DUT
0
20
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.375" (9.5mm)
Lead Length
10
NONINDUCTIVE
20
50
125
O
OSCILLOSCOPE
(NOTE 1)
100 200
150
50
175
800
100
PULSE
GENERATOR
(NOTE 2)
(-)
(+)
1000
FIG.2- TYPICAL REVERSE CHARACTERISTICS
0.01
100
100
+0.5A
-0.25A
-1.0A
0.1
0.1
10
10
1
1
0
FIG.5- TYPICAL INSTANTANEOUS
0
0
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
Tj=25 C
20
0.2
FORWARD CHARACTERISTICS
0
Tj=125 C
Tj=75 C
trr
1cm
40
0.4
FORWARD VOLTAGE. (V)
0
SET TIME BASE FOR
5/ 10ns/ cm
0
60
0.6
80
0.8
100
1.0
Version: A06
120
1.2
140
1.4