F1T1G Taiwan Semiconductor, F1T1G Datasheet
F1T1G
Manufacturer Part Number
F1T1G
Description
Rectifiers 1.0 Amp 50 Volt 150ns
Manufacturer
Taiwan Semiconductor
Datasheet
1.F1T7G.pdf
(2 pages)
Specifications of F1T1G
Product
Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
50 V
Forward Voltage Drop
1.3 V
Recovery Time
150 ns
Forward Continuous Current
1 A
Max Surge Current
30 A
Reverse Current Ir
5 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Package / Case
TS-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
R0
Features
Mechanical Data
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375”(9.5mm) Lead Length
@T
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.0A
Maximum DC Reverse Current @ T
at Rated DC Blocking Voltage @ T
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance ( Note 3 )
Operating Temperature Range
Storage Temperature Range
Notes: 1. Reverse Recovery Test Conditions: I
Type Number
A
= 55℃
202, Method 208 guaranteed
260℃/10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs.,(2.3kg) tension
Low forward voltage drop
High current capability
High reliability
High surge current capability
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Axial leads, solderable per MIL-STD-
Polarity: Color band denotes cathode end
High temperature soldering guaranteed:
Mounting position: Any
Weight: 0.20 gram
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
3. Mount on Cu-Pad Size 5mm x 5mm on P.C.B.
1.0 AMP. Glass Passivated Fast Recovery Rectifiers
A
=125℃
A
=25℃
F1T1G THRU F1T7G
Symbol
V
V
I
V
I
R
T
FSM
(AV)
Trr
RRM
V
RMS
Cj
T
I
STG
DC
θ
R
F
J
JA
F
- 378 -
=0.5A, I
F1T
1G
50
35
50
R
=1.0A, I
F1T
100
100
2G
70
Dimensions in inches and (millimeters)
150
RR
F1T
200
140
200
3G
=0.25A
-65 to +150
-65 to +150
50 to 1000 Volts
Voltage Range
F1T
400
280
400
100
1.0
1.3
5.0
4G
15
90
30
1.0 Ampere
Current
TS-1
F1T
600
420
600
250
5G
F1T
800 1000
560
800 1000
6G
500
F1T
700
7G
Units
O
C/W
pF
uA
uA
nS
℃
℃
V
V
V
A
A
V
Related parts for F1T1G
F1T1G Summary of contents
Page 1
... Typical Thermal Resistance ( Note 3 ) Operating Temperature Range Storage Temperature Range Notes: 1. Reverse Recovery Test Conditions Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C. 3. Mount on Cu-Pad Size 5mm x 5mm on P.C.B. F1T1G THRU F1T7G Dimensions in inches and (millimeters) Symbol F1T F1T 1G ...
Page 2
... RATINGS AND CHARACTERISTIC CURVES (F1T1G THRU F1T7G) FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 10 NONINDUCTIVE NONINDUCTIVE DUT (+) 50Vdc (approx) (-) OSCILLOSCOPE NON (NOTE 1) INDUCTIVE NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms FIG.2- MAXIMUM FORWARD CURRENT DERATING CURVE 1 ...