F1T1G Taiwan Semiconductor, F1T1G Datasheet

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F1T1G

Manufacturer Part Number
F1T1G
Description
Rectifiers 1.0 Amp 50 Volt 150ns
Manufacturer
Taiwan Semiconductor
Datasheet

Specifications of F1T1G

Product
Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
50 V
Forward Voltage Drop
1.3 V
Recovery Time
150 ns
Forward Continuous Current
1 A
Max Surge Current
30 A
Reverse Current Ir
5 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Package / Case
TS-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
R0
Features
Mechanical Data
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375”(9.5mm) Lead Length
@T
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.0A
Maximum DC Reverse Current @ T
at Rated DC Blocking Voltage @ T
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance ( Note 3 )
Operating Temperature Range
Storage Temperature Range
Notes: 1. Reverse Recovery Test Conditions: I
Type Number
A
= 55℃
202, Method 208 guaranteed
260℃/10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs.,(2.3kg) tension
Low forward voltage drop
High current capability
High reliability
High surge current capability
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Axial leads, solderable per MIL-STD-
Polarity: Color band denotes cathode end
High temperature soldering guaranteed:
Mounting position: Any
Weight: 0.20 gram
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
3. Mount on Cu-Pad Size 5mm x 5mm on P.C.B.
1.0 AMP. Glass Passivated Fast Recovery Rectifiers
A
=125℃
A
=25℃
F1T1G THRU F1T7G
Symbol
V
V
I
V
I
R
T
FSM
(AV)
Trr
RRM
V
RMS
Cj
T
I
STG
DC
θ
R
F
J
JA
F
- 378 -
=0.5A, I
F1T
1G
50
35
50
R
=1.0A, I
F1T
100
100
2G
70
Dimensions in inches and (millimeters)
150
RR
F1T
200
140
200
3G
=0.25A
-65 to +150
-65 to +150
50 to 1000 Volts
Voltage Range
F1T
400
280
400
100
1.0
1.3
5.0
4G
15
90
30
1.0 Ampere
Current
TS-1
F1T
600
420
600
250
5G
F1T
800 1000
560
800 1000
6G
500
F1T
700
7G
Units
O
C/W
pF
uA
uA
nS
V
V
V
A
A
V

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F1T1G Summary of contents

Page 1

... Typical Thermal Resistance ( Note 3 ) Operating Temperature Range Storage Temperature Range Notes: 1. Reverse Recovery Test Conditions Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C. 3. Mount on Cu-Pad Size 5mm x 5mm on P.C.B. F1T1G THRU F1T7G Dimensions in inches and (millimeters) Symbol F1T F1T 1G ...

Page 2

... RATINGS AND CHARACTERISTIC CURVES (F1T1G THRU F1T7G) FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 10 NONINDUCTIVE NONINDUCTIVE DUT (+) 50Vdc (approx) (-) OSCILLOSCOPE NON (NOTE 1) INDUCTIVE NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms FIG.2- MAXIMUM FORWARD CURRENT DERATING CURVE 1 ...

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