BZX79-B18,133 NXP Semiconductors, BZX79-B18,133 Datasheet - Page 6

• Manufacturer Part Number: BZX79-B18,133
• Description: DIODE ZENER 18V 500MW DO-35
• Manufacturer: NXP Semiconductors

Specifications of BZX79-B18,133

• Package / Case: DO-204AH, DO-35, Axial
• Voltage - Zener (nom) (vz): 18V
• Voltage - Forward (vf) (max) @ If: 900mV @ 10mA
• Current - Reverse Leakage @ Vr: 50nA @ 12.6V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (max) (zzt): 45 Ohm
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 200°C
• Zener Voltage: 18 V
• Voltage Tolerance: 2 %
• Voltage Temperature Coefficient: 14.4 mV / K
• Zener Current: 250 mA
• Power Dissipation: 500 mW
• Maximum Reverse Leakage Current: 50 nA
• Maximum Zener Impedance: 45 Ohms
• Maximum Operating Temperature: + 200 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933166930133; BZX79-B18 AMO; BZX79-B18 AMO

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board without metallization pad.
GRAPHICAL DATA
2002 Feb 27
R
R
handbook, full pagewidth
SYMBOL
Voltage regulator diodes
th j-tp
th j-a
R th j-a
(K/W)
10
10
10
1
3
2
10
−1
thermal resistance from junction to tie-point lead length 8 mm.
thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1
Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.
1
PARAMETER
δ = 1
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
≤0.001
10
10
6
2
CONDITIONS
10
3
t p
10
4
T
BZX79 series
t p (ms)
VALUE
Product data sheet
δ
300
380
=
t p
T
MBG930
10
5
UNIT
K/W
K/W