TSS4B01G Taiwan Semiconductor, TSS4B01G Datasheet
TSS4B01G
Manufacturer Part Number
TSS4B01G
Description
Rectifiers 4.0 Amp 50 Volt 150 Amp IFSM
Manufacturer
Taiwan Semiconductor
Datasheet
1.TSS4B01G.pdf
(2 pages)
Specifications of TSS4B01G
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
50 V
Forward Voltage Drop
0.98 V
Forward Continuous Current
4 A
Max Surge Current
150 A
Reverse Current Ir
5 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Package / Case
TS-4B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
C2
Features
Mechanical Data
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@T
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@ 4.0A
Maximum Reverse Recovery Time(Note 1)
Maximum DC Reverse Current @ T
at Rated DC Blocking Voltage @ T
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
Notes: 1. Reverse Recovery Test Conditions: I
Type Number
C
=100
UL recognized file # E-96005
Glass passivated junction
Ideal for printed circuit board
Reliable low cost construction
Plastic material has Underwriters
Laboratory Flammability Classification
94V-0
Low Forward Voltage Drop.
High case dielectric strength of 2000V
Case: Molded plastic
Terminals: Leads solderable per MIL-
Weight: 0.15 ounce, 4 grams
Mounting torque: 5 in. lbs. max.
2. Thermal Resistance from Junction to Case with Device Mounted on 2” x 3” x 0.25” Al-Plate
O
Heatsink.
C
STD-750, Method 2026
Single Phase 4.0 Amps. Glass Passivated Super Fast Bridge Rectifiers
TSS4B01G THRU TSS4B03G
A
A
=125℃
=25℃
Symbol
F
- 734 -
V
V
R
I
T
I
=0.5A, I
V
RMS
FSM
(AV)
Trr
V
RRM
RMS
T
I
STG
θ
DC
R
F
J
JC
R
118(3 0)X45
=1.0A, I
043(1 1)
035(0 9)
TSS4B01G TSS4B02G TSS4B03G
Dimensions in inches and (millimeters)
50
35
50
0
RR
=0.25A.
996(25 3)
972(24 7)
087(2 2)
071(1 8)
-55 to + 150
-55 to +150
50 to 200 Volts
Voltage Range
4.0 Amperes
0.98
100
100
150
500
4.0
5.0
5.5
Current
70
35
TS4B
176(4 37)
156(3 96)
303(7 7)
287(7 3)
602(15 3)
579(14 7)
709(18)
669(17)
134(3 4)
122(3 1)
068(1 73)
060(1 52)
200
140
200
147(3 7)
130(3 3)
030(0 75)
022(0 55)
382(9 7)
366(9 3)
Units
℃/W
nS
uA
uA
℃
℃
V
V
V
A
A
V
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TSS4B01G Summary of contents
Page 1
... Storage Temperature Range Notes: 1. Reverse Recovery Test Conditions Thermal Resistance from Junction to Case with Device Mounted on 2” x 3” x 0.25” Al-Plate Heatsink. 118(3 0)X45 RMS 043(1 1) 035(0 9) Dimensions in inches and (millimeters) Symbol TSS4B01G TSS4B02G TSS4B03G 50 V RRM 35 V RMS ...
Page 2
... RATINGS AND CHARACTERISTIC CURVES (TSS4B01G THRU TSS4B03G) FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 10 NONINDUCTIVE NONINDUCTIVE DUT (+) 50Vdc (approx) (-) OSCILLOSCOPE NON (NOTE 1) INDUCTIVE NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms FIG.2- MAXIMUM FORWARD CURRENT DERATING ...