BZX585-C3V3,115 NXP Semiconductors, BZX585-C3V3,115 Datasheet - Page 6

• Manufacturer Part Number: BZX585-C3V3,115
• Description: DIODE ZENER 3.3V 300MW SOD523
• Manufacturer: NXP Semiconductors

Specifications of BZX585-C3V3,115

• Package / Case: SC-79, SOD-523
• Mounting Type: Surface Mount
• Power - Max: 300mW
• Tolerance: ±5%
• Current - Reverse Leakage @ Vr: 5µA @ 1V
• Voltage - Forward (vf) (max) @ If: 1.1V @ 100mA
• Voltage - Zener (nom) (vz): 3.3V
• Impedance (max) (zzt): 95 Ohm
• Zener Voltage: 3.305 V
• Voltage Tolerance: 5 %
• Voltage Temperature Coefficient: - 1.8 mV / K
• Power Dissipation: 300 mW
• Maximum Reverse Leakage Current: 5 uA
• Maximum Zener Impedance: 95 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055839115::BZX585-C3V3 T/R::BZX585-C3V3 T/R

Table 2 Per type BZX585-B/C27 to B/C75
T
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a FR4 printed-circuit board with approximately 35 mm
2. Solder point at cathode tab.
BZX585-
27
30
33
36
39
43
47
51
56
62
68
75
R
R
amb
B or C
th(j-a)
th(j-s)
XXX
SYMBOL
= 25 °C unless otherwise specified.
26.46
29.40
32.34
35.28
38.22
42.14
46.06
49.98
54.88
60.76
66.64
73.50
Tol. ± 2 % (B)
MIN.
WORKING VOLTAGE
thermal resistance from junction to ambient
thermal resistance from junction to solder point
at I
27.54
30.60
33.66
36.72
39.78
43.86
47.94
52.02
57.12
63.24
69.36
76.50
MAX.
Ztest
V
Z
(V)
= 2 mA
25.65
28.50
31.35
34.20
37.05
40.85
44.65
48.45
53.20
58.90
64.60
71.25
Tol. ± 5 % (C) at I
MIN.
28.35
31.50
34.65
37.80
40.95
45.15
49.35
53.55
58.80
65.10
71.40
78.75
MAX.
PARAMETER
65
70
75
80
80
85
85
90
100
120
150
170
TYP.
DIFFERENTIAL RESISTANCE
Ztest
= 0.5 mA
300
300
325
350
350
375
375
400
425
450
475
500
MAX.
r
dif
(Ω)
25
30
35
35
40
45
50
60
70
80
90
95
at I
TYP.
Ztest
= 2 mA
80
80
80
90
130
150
170
180
200
215
240
255
MAX.
2
Cu area at cathode tab.
23.4
26.6
29.7
33.0
36.4
41.2
46.1
51.0
57.0
64.4
71.7
80.2
note 1
note 2
(see figs 3 and 4)
TEMP. COEFF.
at I
S
Ztest
Z
TYP.
(mV/K)
= 2 mA
CONDITIONS
50
50
45
45
45
40
40
40
40
35
35
35
at f = 1 MHz;
DIODE CAP.
V
C
R
MAX.
d
= 0 V
(pF)
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
I
VALUE
ZSM
NON-REPETITIVE
350
PEAK REVERSE
65
(A) at t
CURRENT
MAX.
p
= 100 μs
UNIT
K/W
K/W