AD812ANZ Analog Devices Inc, AD812ANZ Datasheet - Page 5

• Manufacturer Part Number: AD812ANZ
• Description: DUAL LO PWR I-FDBK OP AMP
• Manufacturer: Analog Devices Inc

Specifications of AD812ANZ

• Applications: Current Feedback
• Number Of Circuits: 2
• -3db Bandwidth: 145MHz
• Slew Rate: 1600 V/µs
• Current - Supply: 4.5mA
• Current - Output / Channel: 50mA
• Voltage - Supply, Single/dual (±): 2.4 V ~ 36 V, ±1.2 V ~ 18 V
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Amplifier Type: Current Feedback, Low Power
• Bandwidth: 100 MHz
• Common Mode Rejection Ratio: 60
• Current, Input Bias: 7 μA (+Input), 0.3 μA (-Input)
• Current, Output: 50 mA
• Current, Supply: 5.5 mA
• Harmonic Distortion: -90 dBc
• Impedance, Thermal: 90 °C/W
• Number Of Amplifiers: Dual
• Package Type: Mini-PDIP-8
• Resistance, Input: 15 Megohms (+Input), 65 Ohms (-Input)
• Temperature, Operating, Range: -40 to +85 °C
• Voltage, Input: ±13.5 V (Common-Mode)
• Voltage, Noise: 3.5 nV/sqrt Hz
• Voltage, Offset: 2 mV
• Voltage, Output, High: +14 V
• Voltage, Output, Low: -14 V
• Voltage, Supply: ±15 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V
Internal Power Dissipation
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . .
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . 1.2 V
Output Short Circuit Duration
Storage Temperature Range N, R . . . . . . . . . –65 C to +125 C
Operating Temperature Range . . . . . . . . . . . . –40 C to +85 C
Lead Temperature Range (Soldering, 10 sec) . . . . . . . +300 C
NOTES
1
2
Model
AD812AN
AD812AR
AD812AR-REEL
AD812AR-REEL7
REV. B
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD812 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
Stresses above those listed under Absolute Maximum Ratings may cause perma-
Specification is for device in free air: 8-lead plastic package:
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
8-lead SOIC package:
Plastic (N) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3 Watts
Small Outline (R) . . . . . . . . . . . . . . . . . . . . . . . . . . 0.9 Watts
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
OUT1
V+
8
1
Dimensions shown in inches and (mm).
METALIZATION PHOTO
Temperature
Range
–40 C to +85 C
–40 C to +85 C
JA
ORDERING GUIDE
–IN1
= 150 C/Watt.
2
OUT2
7
0.0783
(1.99)
2
+IN1
3
–IN2
6
Package
Description
8-Lead Plastic DIP
8-Lead Plastic SOIC SO-8
13" Reel
7" Reel
1
V–
4
5 +IN2
4 V–
JA
= 90 C/Watt;
0.0539
(1.37)
Package
Option
N-8
V
S
–5–
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD812 is limited by the associated rise in junction temperature.
The maximum safe junction temperature for the plastic encap-
sulated parts is determined by the glass transition temperature
of the plastic, about 150 C. Exceeding this limit temporarily
may cause a shift in parametric performance due to a change in
the stresses exerted on the die by the package. Exceeding a
junction temperature of 175 C for an extended period can result
in device failure.
While the AD812 is internally short circuit protected, this may
not be sufficient to guarantee that the maximum junction tem-
perature (150 degrees) is not exceeded under all conditions. To
ensure proper operation, it is important to observe the derating
curves.
It must also be noted that in high (noninverting) gain configura-
tions (with low values of gain resistor), a high level of input
overdrive can result in a large input error current, which may
result in a significant power dissipation in the input stage. This
power must be included when computing the junction tempera-
ture rise due to total internal power.
Figure 3. Plot of Maximum Power Dissipation vs.
Temperature
2.0
1.5
1.0
0.5
0
–50
–40 –30 –20 –10
8-LEAD SOIC PACKAGE
AMBIENT TEMPERATURE – C
0
8-LEAD MINI-DIP PACKAGE
10 20 30
WARNING!
40
50 60 70 80
ESD SENSITIVE DEVICE
T
J
= +150 C
AD812
90