ADG1208YRZ-REEL7 Analog Devices Inc, ADG1208YRZ-REEL7 Datasheet - Page 3

• Manufacturer Part Number: ADG1208YRZ-REEL7
• Description: IC,ANALOG MUX,SINGLE,8-CHANNEL,CMOS,SOP,16PIN,PLASTIC
• Manufacturer: Analog Devices Inc
• Series: iCMOS®r

Specifications of ADG1208YRZ-REEL7

• Function: Multiplexer
• Circuit: 1 x 8:1
• On-state Resistance: 270 Ohm
• Voltage Supply Source: Single, Dual Supply
• Voltage - Supply, Single/dual (±): 10.8 V ~ 13.2 V, ±15 V
• Current - Supply: 1µA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SPECIFICATIONS
DUAL SUPPLY
V
Table 1.
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
DD
Analog Signal Range
Source Off Leakage, I
Drain Off Leakage, I
Channel On Leakage, I
Input High Voltage, V
Input Low Voltage, V
Input Current, I
Digital Input Capacitance, C
Transition Time, t
t
t
Break-Before-Make Time Delay, t
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
Total Harmonic Distortion + Noise
−3 dB Bandwidth
C
C
C
On Resistance, R
On Resistance Match Between Channels, ∆R
On Resistance Flatness, R
ON
OFF
S
D
D
= +15 V ± 10%, V
(Off )
ADG1208
ADG1209
ADG1208
ADG1209
(Off ) ADG1208
(Off ) ADG1209
(EN)
(EN)
INL
ON
TRANSITION
or I
D
SS
INL
INH
S
(Off )
INH
(Off )
D
= –15 V ± 10%, GND = 0 V, unless otherwise noted.
, I
S
FLAT
(On)
2
IN
(On)
BBM
ON
+25ºC
120
200
3.5
6
20
64
±0.003
±0.1
±0.003
±0.1
±0.1
±0.02
±0.2
±0.2
±0.005
2
80
130
75
95
83
100
25
0.4
−85
−85
1
1.5
6
7
3.5
4.5
0.15
550
−40ºC to
+85ºC
240
10
76
±0.6
±0.6
±0.6
±0.6
±0.6
165
105
125
Rev. B | Page 3 of 20
−40ºC to
+125ºC
V
270
12
83
±1
±1
±1
±1
±1
2.0
0.8
±0.1
185
115
140
10
SS
to V
1
DD
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA max
nA typ
nA max
nA max
V min
V max
μA max
μA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
% typ
MHz typ
pF typ
pF max
pF typ
pF max
pF typ
pF max
Test Conditions/Comments
V
V
V
V
V
V
V
V
R
V
R
V
R
V
R
V
V
R
R
R
see Figure 39
R
f = 1 MHz, V
f = 1 MHz, V
f = 1 MHz, V
f = 1 MHz, V
f = 1 MHz, V
f = 1 MHz, V
S
DD
S
S
D
S
S
IN
L
S
L
S
L
S
L
S1
S
L
L
L
L
= 1 V/10 V, V
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 50 Ω, C
= 50 Ω, C
= 10 kΩ, 5 V rms, f = 20 Hz to 20 kHz,
= 50 Ω, C
= ±10 V, I
= ±10 V, I
= −5 V/0 V/+5 V, I
= V
= 10 V, see Figure 32
= 10 V, see Figure 34
= 10 V, see Figure 34
= 0 V, R
= ±10 V, V
= V
= V
= +13.5 V, V
D
INL
S2
= ±10 V, see Figure 31
= 10 V, see Figure 33
or V
S
L
L
= 0 Ω, C
ADG1208/ADG1209
L
S
S
S
S
S
S
S
S
= 5 pF, f = 1 MHz, see Figure 36
= 5 pF, f = 1 MHz, see Figure 38
S
INH
L
L
L
L
= 5 pF, see Figure 37
= −1 mA, see Figure 29
= −1 mA
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V
= −10 V, see Figure 30
D
= 35 pF
= 35 pF
= 35 pF
= 35 pF
SS
= 10 V/1 V, see Figure 30
= −13.5 V
L
S
= 1 nF, see Figure 35
= −1 mA