AM29LV017D-90EC AMD (ADVANCED MICRO DEVICES), AM29LV017D-90EC Datasheet - Page 44

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AM29LV017D-90EC

Manufacturer Part Number
AM29LV017D-90EC
Description
Flash Memory IC
Manufacturer
AMD (ADVANCED MICRO DEVICES)
Datasheet

Specifications of AM29LV017D-90EC

Memory Configuration
2M X 8
Package/case
32-PLCC
Supply Voltage Max
3.6V
Access Time, Tacc
90nS
Mounting Type
Surface Mount
Supply Voltage
3V

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AM29LV017D-90EC
Manufacturer:
AMD
Quantity:
6 900
Part Number:
AM29LV017D-90EC
Manufacturer:
AMD
Quantity:
6 900
REVISION SUMMARY
Revision A (October 1997)
First release.
Revision B (October 1997)
Global
Deleted SO package from data sheet.
Revision C (January 1998)
Alternate CE# Controlled Erase/Program
Operations
Changed t
options.
Revision C+1 (February 1998)
Global
Changed data sheet status to Preliminary.
Reset Command
Deleted the last paragraph in this section.
Revision C+2 (March 1998)
Figure 2, In-System Sector Protect/Unprotect
Algorithms (0.35 µm devices)
In the sector protect algorithm, added a “Reset
PLSCNT=1” box in the path from “Protect another sec-
tor?” back to setting up the next sector address.
AC Characteristics
Erase/Program Operations; Alternate CE# Controlled
Erase/Program Operations: Corrected the notes refer-
ence for t
100% tested. Corrected the note reference for t
This parameter is not 100% tested.
Temporary Sector Unprotect Table
Added note reference for t
100% tested.
Figure 21, Sector Protect/Unprotect Timing
Diagram
A valid address is not required for the first write cycle;
only the data 60h.
Erase and Programming Performance
In Note 2, the worst case endurance is now 1 million cycles.
Revision C+3 (August 1998)
Global
Added -70R speed option, and changed -80R speed
option to -80.
WHWH1
CP
from 45 to 35 ns on 80R and 90 speed
and t
WHWH2
VIDR
. These parameters are
. This parameter is not
Am29LV017D
VCS
.
Distinctive Characteristics
Changed process technology to 0.32 µm.
Table 8, Command Definitions
The CFI Query command is now included in the table.
DC Characteristics
Moved V
notes.
Figure 21, Sector Protect/Unprotect Timing
Diagram
Changed timing specifications in diagram to match
those in Figure 2, In-System Sector Protect/Unprotect
Algorithms.
Revision D (January 1999)
Distinctive Characteristics
Added bullet for 20-year data retention at 125 C: reli-
able operation for the life of the system
Connection Diagrams
Updated FBGA figure.
Ordering Information
Valid Combinations for FBGA Packages : New Table
AC Characteristics
Corrected addresses in program, erase, and alternate
CE# controlled write timing diagrams.
Physical Dimensions
Changed package to FBC048.
Revision D+1 (April 12, 1999)
Connection Diagrams
In the FBGA figure, corrected the callout; the figure
shows the top view, balls facing down.
Revision E (February 2, 2000)
Global
The process technology has changed to 0.23 µm, and
is indicated in the part number by the “D” suffix. The 70
ns speed option is now offered in the full voltage range
instead of the regulated voltage range. The 70 ns
devices are also now available in the industrial temper-
ature range. The 80 ns speed option has been deleted.
The extended temperature range is no longer available.
All other parameters and functions remain unchanged.
Ordering Information
Deleted the “U” designator from ordering part numbers
for FBGA devices.
CC
max test condition for I
CC
specifications to
43

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