CY62147EV30LL-45BVIT Cypress Semiconductor Corp, CY62147EV30LL-45BVIT Datasheet - Page 7

• Manufacturer Part Number: CY62147EV30LL-45BVIT
• Description: CY62147EV30LL-45BVIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62147EV30LL-45BVIT

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 4M (256K x 16)
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-VFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Switching Waveforms
Notes
Document Number: 38-05440 Rev. *J
22. The device is continuously selected. OE, CE = V
23. WE is HIGH for read cycle.
24. BGA packaged device is offered in single CE and dual CE options. In this data sheet, for a dual CE device, CE refers to the internal logical combination of CE
25. Address valid before or similar to CE and BHE, BLE transition LOW.
DATA OUT
CURRENT
ADDRESS
DATA OUT
ADDRESS
BHE/BLE
SUPPLY
and CE
V
OE
CE
CC
2
such that when CE
PREVIOUS DATA VALID
HIGH IMPEDANCE
1
is LOW and CE
t
PU
t
Figure 6. Read Cycle No. 1: Address Transition Controlled
LZCE
t
LZBE
t
t
ACE
LZOE
2
t
Figure 7. Read Cycle No. 2: OE Controlled
DBE
is HIGH, CE is LOW. For all other cases CE is HIGH.
IL
t
50%
OHA
, BHE, BLE, or both = V
t
DOE
t
AA
t
RC
IL
.
t
RC
DATA VALID
[23, 24, 25]
DATA VALID
[22, 23]
CY62147EV30 MoBL
t
HZBE
t
t
HZOE
HZCE
t
PD
50%
IMPEDANCE
HIGH
Page 7 of 16
I
I
CC
SB
1
®
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