CY62157EV30LL-45BVIT Cypress Semiconductor Corp, CY62157EV30LL-45BVIT Datasheet - Page 4

• Manufacturer Part Number: CY62157EV30LL-45BVIT
• Description: CY62157EV30LL-45BVIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62157EV30LL-45BVIT

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 8M (512K x 16)
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-VFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. User guidelines are not tested.
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with
Power Applied .......................................... –55°C to + 125°C
Supply Voltage to Ground
Potential ................................ –0.3V to 3.9V (V
DC Voltage Applied to Outputs
in High-Z State
DC Input Voltage
Electrical Characteristics
Over the Operating Range
Notes
Document #: 38-05445 Rev. *H
Parameter
V
V
V
V
I
I
I
I
I
5. V
6. V
7. Full device AC operation assumes a 100 s ramp time from 0 to V
8. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
9. Chip enables (CE
IX
OZ
CC
SB1
SB2
OH
OL
IH
IL
be left floating.
IL(min)
IH(max)
[9]
= –2.0V for pulse durations less than 20 ns.
= V
Output HIGH
voltage
Output LOW
voltage
Input HIGH
voltage
Input LOW
voltage
Input leakage
current
Output leakage
current
V
supply current
Automatic CE
power down
current — CMOS
inputs
Automatic CE
power down
current — CMOS
inputs
CC
CC
Description
+ 0.75V for pulse durations less than 20 ns.
[5, 6]
operating
1
[5, 6]
and CE
............... –0.3V to 3.9V (V
........... –0.3V to 3.9V (V
2
), byte enables (BHE and BLE) and BYTE (48 TSOP I only) need to be tied to CMOS levels to meet the I
I
I
I
I
V
V
V
V
GND < V
GND < V
f = f
f = 1 MHz
CE
V
f = f
V
CE
V
f = 0, V
OH
OH
OL
OL
f = 0 (OE, BHE, BLE and WE),
CC
CC
CC
CC
IN
CC
IN
1
1
= 0.1 mA
= 2.1mA, V
max
max
= –0.1 mA
= –1.0 mA, V
> V
> V
= 2.2V to 2.7V
= 2.7V to 3.6V
= 2.2V to 2.7V
= 2.7V to 3.6V
= 3.60V
> V
> V
CC
CC
CC
(Address and Data Only),
= 1/t
CC
CC
I
O
< V
Test Conditions
< V
– 0.2V, V
= 3.60V
– 0.2V or V
0.2V, CE
– 0.2V or CE
RC
CC
CC
CC
CC max
CCmax
CCmax
, Output Disabled
V
I
CMOS levels
CC
OUT
> 2.70V
CC
IN
> 2.70V
= V
2
< 0.2V)
IN
= 0 mA
+ 0.3V)
+ 0.3V)
+ 0.3V)
< 0.2V
cc
2
< 0.2V,
CCmax
(min) and 200 s wait time after V
< 0.2V,
Output Current into Outputs (LOW) ............................ 20 mA
Static Discharge Voltage .......................................... > 2001V
(MIL-STD-883, Method 3015)
Latch Up Current ................................................... > 200 mA
Operating Range
CY62157EV30LL
–0.3
–0.3
Min
2.0
2.4
1.8
2.2
–1
–1
45 ns (Ind’l/Auto-A)
Device
Typ
1.8
18
2
2
[8]
CC
stabilization.
V
V
CC
CC
Max
Industrial/
0.4
0.4
0.6
0.8
+1
+1
25
3
8
8
Range
Auto-A
Auto-E
+ 0.3
+ 0.3
CC
= V
CY62157EV30 MoBL
CC(typ)
–0.3
–0.3
Min
2.0
2.4
1.8
2.2
–4
–4
–40°C to +85°C
–40°C to +125°C
55 ns (Auto-E)
, T
Temperature
A
SB2
Ambient
Typ
= 25 °C.
1.8
18
/ I
2
2
CCDR
[8]
spec. Other inputs can
V
V
CC
CC
Max
0.4
0.4
0.6
0.8
+4
+4
35
30
30
4
+ 0.3
+ 0.3
Page 4 of 17
2.2V to
V
3.6V
CC
Unit
mA
A
A
A
A
[7]
V
V
V
V
V
V
V
V
®
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