CY7C1019D-10VXIT Cypress Semiconductor Corp, CY7C1019D-10VXIT Datasheet - Page 7

• Manufacturer Part Number: CY7C1019D-10VXIT
• Description: CY7C1019D-10VXIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1019D-10VXIT

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (128K x 8)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-SOJ
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Waveforms
Write Cycle No. 1 (CE Controlled)
Write Cycle No. 2 (WE Controlled, OE HIGH During Write)
Notes
Document #: 38-05464 Rev. *F
16. Data IO is high impedance if OE = V
17. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
18. During this period the IOs are in the output state and input signals should not be applied.
ADDRESS
ADDRESS
DATA IO
DATA IO
WE
WE
CE
OE
CE
NOTE 18
(continued)
IH
t
SA
.
t
HZOE
[16, 17]
t
SA
t
AW
t
AW
t
SCE
t
[16, 17]
t
WC
WC
t
PWE
DATA
t
t
PWE
SD
DATA VALID
t
SCE
IN
t
t
SD
SCE
VALID
t
HD
t
HA
t
HA
t
HD
CY7C1019D
Page 7 of 13
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