CY7C1041D-10VXIT Cypress Semiconductor Corp, CY7C1041D-10VXIT Datasheet - Page 5

• Manufacturer Part Number: CY7C1041D-10VXIT
• Description: CY7C1041D-10VXIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1041D-10VXIT

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 4M (256K x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-SOJ
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 38-05472 Rev. *E
Switching Waveforms
Read Cycle No. 2 (OE Controlled)
Write Cycle No. 1 (CE Controlled)
Notes:
15. WE is HIGH for read cycle.
16. Address valid prior to or coincident with CE transition LOW
17. Data I/O is high impedance if OE or BHE and/or BLE= V
18. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
DATA OUT
CURRENT
ADDRESS
BHE, BLE
SUPPLY
BHE, BLE
V
DATAI/O
ADDRESS
CC
OE
CE
CE
WE
HIGH IMPEDANCE
t
t
(continued)
LZCE
PU
t
SA
[17, 18]
[15,16]
t
ACE
t
t
LZBE
t
DBE
LZOE
t
DOE
50%
IH
.
t
AW
t
RC
t
WC
t
SCE
t
PWE
t
BW
DATA VALID
t
SD
t
t
HZOE
HD
t
t
t
HZCE
HA
HZBE
t
PD
CY7C1041D
50%
IMPEDANCE
HIGH
Page 5 of 11
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