CY7C1041D-10ZSXIT Cypress Semiconductor Corp, CY7C1041D-10ZSXIT Datasheet - Page 5

CY7C1041D-10ZSXIT

CY7C1041D-10ZSXIT

Manufacturer Part Number
CY7C1041D-10ZSXIT
Description
CY7C1041D-10ZSXIT
Manufacturer
Cypress Semiconductor Corp

Specifications of CY7C1041D-10ZSXIT

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
4M (256K x 16)
Speed
10ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
44-TSOP II
Density
4Mb
Access Time (max)
10ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
5V
Address Bus
18b
Package Type
TSOP-II
Operating Temp Range
-40C to 85C
Number Of Ports
1
Supply Current
90mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
44
Word Size
16b
Number Of Words
256K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document #: 38-05472 Rev. *E
Switching Waveforms
Read Cycle No. 2 (OE Controlled)
Write Cycle No. 1 (CE Controlled)
Notes:
15. WE is HIGH for read cycle.
16. Address valid prior to or coincident with CE transition LOW
17. Data I/O is high impedance if OE or BHE and/or BLE= V
18. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
DATA OUT
CURRENT
ADDRESS
BHE, BLE
SUPPLY
BHE, BLE
V
DATAI/O
ADDRESS
CC
OE
CE
CE
WE
HIGH IMPEDANCE
t
t
(continued)
LZCE
PU
t
SA
[17, 18]
[15,16]
t
ACE
t
t
LZBE
t
DBE
LZOE
t
DOE
50%
IH
.
t
AW
t
RC
t
WC
t
SCE
t
PWE
t
BW
DATA VALID
t
SD
t
t
HZOE
HD
t
t
t
HZCE
HA
HZBE
t
PD
CY7C1041D
50%
IMPEDANCE
HIGH
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