CY7C1049D-10VXIT Cypress Semiconductor Corp, CY7C1049D-10VXIT Datasheet - Page 4

• Manufacturer Part Number: CY7C1049D-10VXIT
• Description: CY7C1049D-10VXIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1049D-10VXIT

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 4M (512K x 8)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 36-SOJ
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 38-05474 Rev. *D
Switching Characteristics
Data Retention Characteristics
Switching Waveforms
Read Cycle No. 1
Notes:
11. Full device operation requires linear V
12. No input may exceed V
13. Device is continuously selected. OE, CE = V
14. WE is HIGH for read cycle.
t
t
t
t
t
t
V
I
t
t
Data Retention Waveform
SA
PWE
SD
HD
LZWE
HZWE
CCDR
CDR
R
DR
Parameter
[11]
DATA OUT
ADDRESS
Parameter
V
[3]
CE
CC
V
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
CC
[13, 14]
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE HIGH to Low Z
WE LOW to High Z
for Data Retention
CC
PREVIOUS DATA VALID
+ 0.5V.
Description
CC
[5]
ramp from V
Over the Operating Range (continued)
IL
.
[8]
[7, 8]
t
CDR
4.5V
Over the Operating Range
t
OHA
DR
Description
to V
CC(min.)
t
AA
DATA RETENTION MODE
> 50 s or stable at V
V
CE > V
V
CC
IN
V
DR
> V
t
= V
RC
> 2V
CC
CC
DR
– 0.3V
– 0.3V or V
CC(min.)
= 2.0V,
Conditions
> 50 s
IN
[12]
< 0.3V
Min.
4.5V
0
6
0
3
7
DATA VALID
t
R
-10
Min.
2.0
t
RC
0
Max.
CY7C1049D
5
Max
10
Page 4 of 10
Unit
ns
ns
ns
ns
ns
ns
Unit
mA
ns
ns
V
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