CY7C1412KV18-250BZI Cypress Semiconductor Corp, CY7C1412KV18-250BZI Datasheet - Page 22

• Manufacturer Part Number: CY7C1412KV18-250BZI
• Description: CY7C1412KV18-250BZI
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1412KV18-250BZI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 36M (2M x 18)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Electrical Characteristics
DC Electrical Characteristics
Over the Operating Range
Note
Document Number: 001-57825 Rev. *D
I
23. The operation current is calculated with 50% read cycle and 50% write cycle.
DD
Parameter
[23]
V
DD
operating supply
Description
[19]
(continued)
V
I
f = f
OUT
DD
MAX
= Max,
= 0 mA,
= 1/t
CYC
Test Conditions
333 MHz (× 8)
300 MHz (× 8)
250 MHz (× 8)
200 MHz (× 8)
167 MHz (× 8)
CY7C1410KV18, CY7C1425KV18
CY7C1412KV18, CY7C1414KV18
(× 18)
(× 36)
(× 18)
(× 36)
(× 18)
(× 36)
(× 18)
(× 36)
(× 18)
(× 36)
(× 9)
(× 9)
(× 9)
(× 9)
(× 9)
Min
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max
730
730
750
910
680
680
700
850
590
590
610
730
510
510
520
620
450
450
460
540
Page 22 of 32
Unit
mA
mA
mA
mA
mA
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