DG211BDQ-T1-E3 Vishay, DG211BDQ-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: DG211BDQ-T1-E3
• Description: IC,ANALOG SWITCH,QUAD,SPST,CMOS,TSSOP,16PIN,PLASTIC
• Manufacturer: Vishay

Specifications of DG211BDQ-T1-E3

• Function: Switch
• Circuit: 4 x SPST - NC
• On-state Resistance: 85 Ohm
• Current - Supply: 10µA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP
• Number Of Switches: Quad
• Switch Configuration: SPST
• On Resistance (max): 160 Ohms
• On Time (max): 300 ns
• Off Time (max): 200 ns
• Supply Voltage (max): 25 V
• Supply Voltage (min): 4.5 V
• Maximum Power Dissipation: 640 mW
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DG211BDQ-T1-E3TR

DG211B, DG212B
Vishay Siliconix
TEST CIRCUITS
www.vishay.com
6
V
S
= + 2 V
V
V
3 V
S
g
Off Isolation = 20 log
R
g
0V, 2.4 V
= 50 Ω
3 V
R
g
S
IN
GND
Figure 3. Off Isolation
C
S
IN
+ 15 V
GND
IN
S
V+
V
V
GND
S
O
- 15 V
V+
V-
V
+ 15 V
O
V+
D
+ 15 V
= V
- 15 V
V-
S
- 15 V
V-
D
R
D
R
1 kΩ
L
L
+ r
C
R
DS(on)
L
C
1000 pF
Figure 5. Charge Injection
Figure 2. Switching Time
L
C
35 pF
L
V
R
V
O
L
O
V
O
X
C = RF bypass
TALK
V
Isolation = 20 log
S
Output
Switch
Logic
Input
R
g
Figure 4. Channel-to-Channel Crosstalk
The charge injection in coulombs is Q = C
ΔV
= 50
0 V, 2.4 V
0 V, 2.4 V
O
V
= measured voltage error due to charge injection
3 V
0 V
Ω
O
NC
V
IN
O
X
V
V
C
S
O
ON
S
IN
S
IN
1
2
t
1
2
ON
GND
50 %
V+
90 %
S11-0179-Rev. J, 07-Feb-11
ΔV
OFF
+ 15 V
Document Number: 70040
O
- 15 V
V-
D
D
t
OFF
1
2
L
x ΔV
C
ON
t
t
O
r
f
< 20 ns
< 20 ns
50
R
V
L
O
Ω