MMBZ5243ELT3G ON Semiconductor, MMBZ5243ELT3G Datasheet

MMBZ5243ELT3G

Manufacturer Part Number

MMBZ5243ELT3G

Description

DIODE ZENER 13V 225MW SOT-23

Manufacturer

ON Semiconductor

Datasheet

1.MMBZ5232ELT1G.pdf (6 pages)

Specifications of MMBZ5243ELT3G

Voltage - Zener (nom) (vz)

13V

Voltage - Forward (vf) (max) @ If

900mV @ 10mA

Current - Reverse Leakage @ Vr

500nA @ 9.9V

Power - Max

225mW

Impedance (max) (zzt)

13 Ohm

Mounting Type

Surface Mount

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Operating Temperature

-65°C ~ 150°C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Tolerance

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MMBZ5221ELT1 Series

Zener Voltage Regulators

225 mW SOT−23 Surface Mount

mount plastic SOT−23 package. These devices are designed to provide

voltage regulation with minimum space requirement. They are well

suited for applications such as cellular phones, hand held portables,

and high density PC boards.

Features

•

Mechanical Characteristics:

CASE:

FINISH:

MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

POLARITY:

FLAMMABILITY RATING:

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Nonrepetitive current pulse per Figure 9.

2. FR−5 = 1.0 X 0.75 X 0.62 in.

3. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.

MAXIMUM RATINGS

August, 2005 − Rev. 6

Peak Power Dissipation @ 20 ms (Note 1)

Total Power Dissipation on FR−5 Board,

Thermal Resistance, Junction−to−Ambient

Total Power Dissipation on Alumina

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature Range

This series of Zener diodes is offered in the convenient, surface

260°C for 10 Seconds

225 mW Rating on FR−4 or FR−5 Board

Zener Voltage Range − 2.4 V to 91 V

Package Designed for Optimal Automated Board Assembly

Small Package Size for High Density Applications

ESD Rating of Class 3 (>16 kV) per Human Body Model

Peak Power − 225 W (8 x 20 ms)

Pb−Free Packages are Available

@ T

(Note 2) @ T

Derated above 25°C

Substrate, (Note 3) @ T

Derated above 25°C

Void-free, transfer-molded, thermosetting plastic case

Corrosion resistant finish, easily solderable

≤ 25°C

Cathode indicated by polarity band

Rating

= 25°C

Preferred Device

= 25°C

UL 94 V−0

Symbol

, T

qJA

stg

−65 to

+150

Max

225

556

300

417

1.8

2.4

mW/°C

°C/W

Unit

°C

Devices listed in bold, italic are ON Semiconductor

Preferred devices. Preferred devices are recommended

choices for future use and best overall value.

MMBZ52xxELT1

MMBZ52xxELT1G

MMBZ52xxELT3

MMBZ52xxELT3G

†For information on tape and reel specifications,

See specific marking information in the device marking

column of the Electrical Characteristics table on page 2 of

this data sheet.

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Device

*Date Code orientation may vary depending

(Note: Microdot may be in either location)

DEVICE MARKING INFORMATION

upon manufacturing location.

ORDERING INFORMATION

Cathode

Bxx

http://onsemi.com

= Device Code

= (Refer to page 2)

= Date Code*

= Pb−Free Package

CASE 318

STYLE 8

SOT−23

(Pb−Free)

Package

SOT−23

Publication Order Number:

MMBZ5221ELT1/D

10000/Tape & Reel

3000/Tape & Reel

Anode

MARKING

DIAGRAM

Shipping

Bxx M G

†

Related parts for MMBZ5243ELT3G

MMBZ5243ELT3G Summary of contents

Page 1

... Brochure, BRD8011/D. +150 See specific marking information in the device marking column of the Electrical Characteristics table on page 2 of this data sheet. Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com ...

Page 2

ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T unless otherwise noted 0.95 V Max Symbol Parameter V Reverse Zener Voltage @ Reverse Current ZT Z Maximum Zener Impedance @ I ZT ...

Page 3

ELECTRICAL CHARACTERISTICS Device Marking Device* MMBZ5252ELT1, G† BH6 MMBZ5253ELT1/T3 BH7 MMBZ5254ELT1/T3,G BH8 MMBZ5255ELT1/T3, G BH9 MMBZ5256ELT1/T3, G BJ1 MMBZ5257ELT1/T3,G BJ2 MMBZ5258ELT1/T3, G BJ3 MMBZ5262ELT1/T3, G BJ7 MMBZ5263ELT1/T3, G BJ8 MMBZ5265ELT1, G† BK1 5. Zener voltage is measured with a pulse ...

Page 4

TYPICAL T VALUES C 6 FOR MMBZ5221BLT1 SERIES −1 −2 − NOMINAL ZENER VOLTAGE (V) Z Figure 1. Temperature Coefficients (Temperature Range − 55°C ...

Page 5

V BIAS 1 V BIAS 100 BIAS AT 50 NOM NOMINAL ZENER VOLTAGE (V) Z Figure 5. Typical Capacitance 100 10 1 0.1 0. ...

Page 6

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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