MBR2545CT Taiwan Semiconductor, MBR2545CT Datasheet
MBR2545CT
Manufacturer Part Number
MBR2545CT
Description
Schottky (Diodes & Rectifiers) 30A 45V
Manufacturer
Taiwan Semiconductor
Datasheet
1.MBR2550CT.pdf
(2 pages)
Specifications of MBR2545CT
Product
Schottky Rectifiers
Peak Reverse Voltage
45 V
Forward Continuous Current
25 A
Max Surge Current
200 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.82 V
Maximum Reverse Leakage Current
0.2 mA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
C0
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBR2545CT
Manufacturer:
SAMSUNG
Quantity:
4 500
Company:
Part Number:
MBR2545CT
Manufacturer:
VISHY
Quantity:
5 181
Part Number:
MBR2545CT
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MBR2545CTG
Manufacturer:
ON/安森美
Quantity:
20 000
Notes:
Features
Mechanical Data
Maximum Ratings and Electrical Characteristics
Rating at 25
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at
T
Peak Repetitive Forward Current (Rated V
Wave, 20KHz) at Tc=130
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
Maximum Instantaneous Reverse Current @ Tc=25
at
(Note 2)
Voltage Rate of Change, (Rated V
Typical Junction Capacitance
M
Operating Junction Temperature Range
Storage Temperature Range
C
Type Number
aximum
=130
R
ated
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
Cases: JEDEC TO-220AB molded plastic
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
o
C
DC
T
o
hermal
C/10 seconds,0.25”(6.35mm)from case
Blocking Voltage Per Leg @ Tc=125
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, with Heatsink size (4”x6”x0.25”) Al-Plat
o
C ambient temperature unless otherwise specified.
R
esistance
I
I
I
I
F
F
F
F
=12.5A, Tc=25
=12.5A, Tc=125
=25A, Tc=25
=25A, Tc=125
o
C
P
er
L
R
eg (
)
o
C
o
o
C
C
o
N
C
ote 3)
R
, Square
o
C
o
C
Symbol
MBR2535CT - MBR25150CT
dV/dt
R
V
V
T
I
I
V
I
I
FRM
RRM
(AV)
FSM
V
STG
RRM
Cj
θJC
T
RMS
I
- 154 -
DC
R
F
J
25.0 AMPS. Schottky Barrier Rectifiers
MBR
2535
CT
35
24
35
0.82
0.73
600
1.0
0.2
15
－
－
Dimensions in inches and (millimeters)
MBR
2545
CT
45
31
45
MBR
2550
CT
50
35
50
-65 to +150
-65 to +175
0.75
0.65
0.2
10
--
--
10,000
MBR
2560
TO-220AB
200
1.0
CT
60
42
60
25
25
MBR
2590
460
0.5
CT
90
63
90
0.85
0.75
0.92
0.88
e.
0.1
7.5
25100
MBR
100
100
CT
70
25150
MBR
150
105
150
0.95
0.92
1.02
0.98
CT
0.1
5
Version: C08
Units
o
V/uS
C/W
mA
mA
pF
o
o
V
V
V
A
A
A
A
V
C
C
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MBR2545CT Summary of contents
Page 1
Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, ...
Page 2
... Vsig=50mVp-p 10 100 0.01 SURGE CURRENT PER LEG Tj=Tj max. 8.3ms Single Half Sine Wave JEDEC Method 10 NUMBER OF CYCLES AT 60Hz PER LEG 0 Tj=125 C 0 Tj=25 C MBR2535CT-MBR2545CT MBR2550CT-MBR25150CT 100 120 140 PER LEG 0 PULSE DURATION. (sec) Version: C08 100 100 ...