MBR10H150CT-E3/45 Vishay, MBR10H150CT-E3/45 Datasheet

DIODE SCHOTTKY DUAL 150V TO220AB

MBR10H150CT-E3/45

Manufacturer Part Number
MBR10H150CT-E3/45
Description
DIODE SCHOTTKY DUAL 150V TO220AB
Manufacturer
Vishay
Datasheet

Specifications of MBR10H150CT-E3/45

Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
880mV @ 5A
Current - Reverse Leakage @ Vr
5µA @ 150V
Current - Average Rectified (io) (per Diode)
5A
Voltage - Dc Reverse (vr) (max)
150V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Product
Schottky Diodes
Peak Reverse Voltage
150 V
Forward Continuous Current
10 A
Max Surge Current
160 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.96 V
Maximum Reverse Leakage Current
5 uA
Operating Temperature Range
- 65 C to + 175 C
Mounting Style
Through Hole
Repetitive Reverse Voltage Vrrm Max
150V
Forward Current If(av)
5A
Forward Voltage Vf Max
720mV
Forward Surge Current Ifsm Max
160A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
MBR10H150CT-E3/45GI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBR10H150CT-E3/45
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 88779
Revision: 18-Apr-08
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
Peak repetitive reverse current per diode at t
Peak non-repetitive reverse surge energy per diode (8/20 µs waveform)
Non-repetitive avalanche energy per diode at 25 °C, I
Voltage rate of change (rated V
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min
Dual Common-Cathode High-Voltage Schottky Rectifier
V
I
I
F(AV)
TO-220AB
FSM
RRM
V
T
MBR10H150CT
F
J
1
2
PIN 1
PIN 3
3
SB10H150CT-1
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
TO-262AA
For technical questions within your region, please contact one of the following:
R
)
MBR10H150CT, MBRF10H150CT & SB10H150CT-1
C
1
= 25 °C unless otherwise noted)
MBRF10H150CT
ITO-220AB
2
PIN 2
CASE
3
p
2 x 5 A
175 °C
0.72 V
= 2 µs, 1 kHz
150 V
160 A
1
Low Leakage Current 5.0 µA
2
AS
3
= 1.5 A, L = 10 mH
total device
per diode
FEATURES
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling and
polarity protection applications.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Mounting Torque: 10 in-lbs maximum
Polarity: As marked
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High frequency operation
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
SYMBOL
T
V
J
V
E
I
dV/dt
I
I
V
, T
F(AV)
E
V
RRM
FSM
RWM
RRM
RSM
DC
AS
AC
STG
Vishay General Semiconductor
MBR10H150CT
- 65 to + 175
10 000
11.25
1500
150
150
150
160
1.0
10
10
5
www.vishay.com
UNIT
V/µs
mJ
mJ
°C
V
V
V
A
A
A
V
1

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MBR10H150CT-E3/45 Summary of contents

Page 1

... MBR10H150CT, MBRF10H150CT & SB10H150CT-1 Dual Common-Cathode High-Voltage Schottky Rectifier TO-220AB ITO-220AB MBRF10H150CT MBR10H150CT TO-262AA 2 1 SB10H150CT-1 PIN 1 PIN 3 PRIMARY CHARACTERISTICS I F(AV) V RRM I FSM MAXIMUM RATINGS ( °C unless otherwise noted) C PARAMETER Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current (Fig ...

Page 2

... Note: (1) Pulse test: 300 µs pulse width duty cycle THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance per diode ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-220AB MBR10H150CT-E3/45 ITO-220AB MBRF10H150CT-E3/45 TO-262AA SB10H150CT-1E3/45 RATINGS AND CHARACTERISTICS CURVES ( °C unless otherwise noted ...

Page 3

... MBR10H150CT, MBRF10H150CT & SB10H150CT-1 100 T = 175 ° 125 ° °C J 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode 10 000 T = 175 °C J 1000 T = 125 °C J 100 ° 0.1 0. Percent of Rated Peak Reverse Voltage (%) Figure 4 ...

Page 4

... MBR10H150CT, MBRF10H150CT & SB10H150CT-1 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.398 (10.10) 0.382 (9.70) 0.150 (3.80) 0.055 (1.40) 0.343 (8.70) 0.139 (3.54) 0.047 (1.20) TYP. DIA. 0.114 (2.90) 0.106 (2.70) 0.067 (1.70) TYP. 0.331 (8.40) 0.634 (16.10) TYP. ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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