MMBD352WT1 ON Semiconductor, MMBD352WT1 Datasheet

Schottky (Diodes & Rectifiers) 7V 225mW Dual

MMBD352WT1

Manufacturer Part Number

MMBD352WT1

Description

Schottky (Diodes & Rectifiers) 7V 225mW Dual

Manufacturer

ON Semiconductor

Datasheet

1.MMBD352WT1.pdf (3 pages)

Specifications of MMBD352WT1

Product

Schottky Diodes

Peak Reverse Voltage

7 V

Configuration

Dual Series

Forward Voltage Drop

0.6 V @ 0.01 A

Maximum Reverse Leakage Current

10 uA

Operating Temperature Range

- 55 C to + 150 C

Mounting Style

SMD/SMT

Package / Case

SC-70

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MMBD352WT1G

Manufacturer:

Quantity:

30 000

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MMBD352WT1G

Dual Schottky Barrier Diode

but are suitable also for use in detector and ultra- -fast switching

circuits.

Features



Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR-- 5 = 1.0 ¢ 0.75 ¢ 0.062 in.

2. Alumina = 0.4 ¢ 0.3 ¢ 0.024 in. 99.5% alumina.

 Semiconductor Components Industries, LLC, 2010

October, 2010 - - Rev. 4

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

Continuous Reverse Voltage

Total Device Dissipation FR-- 5 Board

Thermal Resistance,

Total Device Dissipation Alumina

Thermal Resistance,

Junction and Storage Temperature

These devices are designed primarily for UHF mixer applications

Compliant

Very Low Capacitance - - Less Than 1.0 pF @ 0 V

Low Forward Voltage - - 0.5 V (Typ) @ I

These Devices are Pb- -Free, Halogen Free/BFR Free and are RoHS

(Note 1)

Derate above 25C

Junction--to--Ambient

Substrate (Note 2) T

Derate above 25C

Junction--to--Ambient

= 25C

Characteristic

Rating

= 25C

Symbol

, T

θJA

stg

= 10 mA

-- 55 to +150

Value

Max

200

625

300

417

7.0

1.6

2.4

mW/C

C/W

Unit

C

†For information on tape and reel specifications,

MMBD352WT1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Device

(Note: Microdot may be in either location)

ORDERING INFORMATION

ANODE

MARKING DIAGRAM

http://onsemi.com

CATHODE/ANODE

= Specific Device Code

= Date Code

= Pb--Free Package

(Pb--Free)

SOT--323

Package

M5 MG

Publication Order Number:

SOT- -323 (SC- -70)

CASE 419

STYLE 9

3000/Tape & Reel

MMBD352WT1/D

CATHODE

Shipping

†

Related parts for MMBD352WT1

MMBD352WT1 Summary of contents

Page 1

... Microdot may be in either location) ORDERING INFORMATION Device Package Shipping MMBD352WT1G SOT--323 3000/Tape & Reel (Pb--Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MMBD352WT1/D † ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Forward Voltage ( mAdc) F Reverse Voltage Leakage Current ( Capacitance ( 1.0 MHz) R 100 T = 85C ...

Page 3

... H 2.00 2.10 2.40 0.079 0.083 E PIN 1. ANODE 2. CATHODE 3. CATHODE--ANODE   mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBD352WT1/D MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 ...

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