NUR30QW5T1G ON Semiconductor, NUR30QW5T1G Datasheet - Page 2

• Manufacturer Part Number: NUR30QW5T1G
• Description: Schottky (Diodes & Rectifiers) Quad Schottky Barrier Diode Array
• Manufacturer: ON Semiconductor

Specifications of NUR30QW5T1G

• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Configuration: Quad Common Cathode
• Recovery Time: 5 ns (Typ)
• Forward Voltage Drop: 0.5 V
• Maximum Reverse Leakage Current: 30 uA
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: SC-88A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
+10 V
Total Capacitance (V
Reverse Leakage (V
Forward Voltage (I
Forward Voltage (I
Forward Voltage (I
Forward Voltage (I
Forward Voltage (I
Reverse Recovery Time
(I
50 W OUTPUT
F
GENERATOR
= I
PULSE
R
820 W
= 10 mAdc, I
0.1 mF
F
F
F
F
F
= 0.1 mAdc)
= 1.0 mAdc)
= 10 mAdc)
= 100 mAdc)
= 200 mAdc)
100 mH
R
2 k
R
= 10 V)
R(REC)
= 1.0 V, f = 1.0 MHz)
Characteristic
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
Notes:
Notes:
= 1.0 mAdc) (Figure 1)
I
F
2. Input pulse is adjusted so I
3. t
DUT
p
» t
(EACH DIODE) (T
rr
Figure 1. Recovery Time Equivalent Test Circuit
OSCILLOSCOPE
0.1 mF
50 W INPUT
SAMPLING
http://onsemi.com
A
= 25°C unless otherwise noted)
R(peak)
2
is equal to 10 mA.
V
R
Symbol
t
INPUT SIGNAL
r
C
V
V
V
V
V
I
t
10%
R
rr
90%
F
F
F
F
F
T
t
p
Min
t
F
−
−
−
−
−
−
−
−
) of 10 mA.
I
I
R
F
0.15
0.21
0.28
0.36
0.41
Typ
1.5
5.0
10
(I
F
= I
at i
OUTPUT PULSE
R
= 10 mA; measured
R(REC)
t
rr
Max
0.19
0.25
0.30
0.41
0.50
20
30
−
i
R(REC)
= 1 mA)
= 1 mA
mAdc
Unit
t
Vdc
Vdc
Vdc
Vdc
Vdc
pF
ns