ZHCS756TA Diodes Inc, ZHCS756TA Datasheet
ZHCS756TA
Manufacturer Part Number
ZHCS756TA
Description
Schottky (Diodes & Rectifiers) VR=60V IF=750mA IR=100uA
Manufacturer
Diodes Inc
Datasheet
1.ZHCS756TA.pdf
(3 pages)
Specifications of ZHCS756TA
Product
Schottky Diodes
Peak Reverse Voltage
60 V
Forward Continuous Current
0.75 A
Max Surge Current
12 A
Mounting Style
SMD/SMT
Package / Case
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE “SuperBAT”
ISSUE 1- NOVEMBER 1997
FEATURES:
APPLICATIONS:
PARTMARK DETAIL: S76
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width= 300 s; duty cycle 2% .
PARAMETER
Continuous Reverse Voltage
Forward Current (Continuous)
Forward Voltage @ I
Average Peak Forward Current; D.C. = 50%
Non Repetitive Forward Current t 100 s
Power Dissipation at T
Storage Temperature Range
Junction Temperature
PARAMETER
Reverse Breakdown
Voltage
Forward Voltage
Reverse Current
Diode Capacitance
Reverse Recovery
Time
Low V
High Current Capability
DC - DC converters
Mobile telecomms
PCMCIA
F
F
= 750mA
amb
SYMBOL
V
V
I
C
t
R
rr
D
(BR)R
F
= 25° C
t 10ms
MIN.
60
TYP.
80
250
285
350
440
520
600
760
50
17
12
amb
SYMBOL
I
V
I
I
P
T
T
V
F
FAV
FSM
tot
stg
j
R
F
= 25° C unless otherwise stated).
MAX.
290
330
410
500
610
700
900
100
UNIT
V
mV
mV
mV
mV
mV
mV
mV
pF
ns
A
1
3
-55 to + 150
CONDITIONS.
I
I
I
I
I
I
I
I
V
f= 1MHz,V
switched from
I
Measured at I
R
F
F
F
F
F
F
F
F
VALUE
= 50mA*
= 100mA*
= 250mA*
= 500mA*
= 750mA*
= 1000mA*
= 1500mA*
= 300 A
R
= 500mA to I
1500
= 45V
750
610
500
125
60
12
5
C
1
ZHCS756
R
= 25V
SOT23
R
= 50mA
R
= 500mA
UNIT
mW
mA
mV
mA
° C
° C
V
A
A
A
3
2
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ZHCS756TA Summary of contents
Page 1
SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” ISSUE 1- NOVEMBER 1997 FEATURES: Low V F High Current Capability APPLICATIONS converters Mobile telecomms PCMCIA PARTMARK DETAIL: S76 ABSOLUTE MAXIMUM RATINGS. PARAMETER Continuous Reverse Voltage Forward Current (Continuous) ...
Page 2
ZHCS756 TYPICAL CHARACTERISTICS 1 100m 10m 0.1 0.2 0 Forward Voltage ( Typical DC 0.8 D=0.5 0.6 D=0.2 0.4 D=0.1 0.2 D=0. ...
Page 3
MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate. TYPICAL CHARACTERISTICS ZHCS756 ...