BAS70-04LT1 ON Semiconductor, BAS70-04LT1 Datasheet
BAS70-04LT1
Manufacturer Part Number
BAS70-04LT1
Description
Schottky (Diodes & Rectifiers) 70V 225mW Dual
Manufacturer
ON Semiconductor
Datasheet
1.BAS70-04LT1.pdf
(3 pages)
Specifications of BAS70-04LT1
Product
Schottky Diodes
Peak Reverse Voltage
70 V
Max Surge Current
0.1 A
Configuration
Dual Series
Forward Voltage Drop
1 V at 0.015 A
Maximum Reverse Leakage Current
10 uA
Operating Temperature Range
- 55 C to + 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAS70-04LT1
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
BAS70-04LT1G
Manufacturer:
ANPEC
Quantity:
1 400
Company:
Part Number:
BAS70-04LT1G
Manufacturer:
ON Semiconductor
Quantity:
311 825
Part Number:
BAS70-04LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
BAS70-04LT1G
Dual Series
Schottky Barrier Diode
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ minimum pad.
2. FR−4 @ 1.0 x 1.0 in pad.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 9
Thermal Resistance
Junction−to−Ambient
Reverse Voltage
Non−Repetitive Peak Forward
Forward Power Dissipation
Operating Junction and Storage
These Schottky barrier diodes are designed for high speed switching
Compliant
Extremely Fast Switching Speed
Low Forward Voltage
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Surge Current (t ≤ 1.0 s)
@ T
Derate above 25°C
Temperature Range
A
= 25°C
Characteristic
Rating
(T
J
= 150°C unless otherwise noted)
Symbol
Symbol
T
R
I
J
FSM
V
P
, T
qJA
R
F
stg
−55 to +150
(Note 1)
(Note 2)
Value
Max
100
225
508
311
1.8
70
1
mW/°C
°C/W
Unit
Unit
mW
mA
°C
V
†For information on tape and reel specifications,
BAS70−04LT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Device
(Note: Microdot may be in either location)
ANODE
1
70 VOLTS SCHOTTKY
1
ORDERING INFORMATION
CG = Specific Device Code
M
G
BARRIER DIODE
2
MARKING DIAGRAM
http://onsemi.com
= Date Code*
= Pb−Free Package
CATHODE/ANODE
1
3
(Pb−Free)
Package
SOT−23
CG M G
3
Publication Order Number:
G
(TO−236AB)
CASE 318
CATHODE
3000 / Tape & Reel
SOT−23
BAS70−04LT1/D
2
Shipping
†
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BAS70-04LT1 Summary of contents
Page 1
... BAS70-04LT1G Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited ...
Page 2
ELECTRICAL CHARACTERISTICS (T Characteristic Reverse Breakdown Voltage ( μA) R Total Capacitance ( 1.0 MHz) R Reverse Leakage ( Forward Voltage (I = 1.0 ...
Page 3
... E STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE 2.0 mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BAS70−04LT1/D MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 ...