VSKHF180-12HKP Vishay, VSKHF180-12HKP Datasheet - Page 2

• Manufacturer Part Number: VSKHF180-12HKP
• Description: SCR Modules 180 Amp 1200 Volt 400 Amp IT(RMS)
• Manufacturer: Vishay

Specifications of VSKHF180-12HKP

• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Screw
• Package / Case: MAGN-A-PAK
• Breakover Current Ibo Max: 7470 A
• Gate Trigger Current (igt): 200 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 1200 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

VSK.F180..P Series
Vishay Semiconductors
www.vishay.com
2
CURRENT CARRYING CAPABILITY
FREQUENCY
50 Hz
400 Hz
2500 Hz
5000 Hz
10 000 Hz
Recovery voltage V
Voltage before turn-on V
Rise of on-state current dl/dt
Case temperature
Equivalent values for RC circuit
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS current
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
Low level value or threshold voltage
High level value of threshold voltage
Low level value on-state slope resistance
High level value on-state slope resistance
Maximum on-state voltage drop
Maximum holding current
Typical latching current
2
2
t for fusing
t for fusing
r
d
[e-mail], [e-mail],
For technical questions within your region, please contact one of the following:
Fast Thyristor/Diode and Thyristor/Thyristor
SYMBOL
370
435
290
240
170
I
V
V
85
T(RMS)
I
I
(MAGN-A-PAK Power Modules), 180 A
V
I
T(TO)1
T(TO)2
T(AV)
TSM
I
2
r
r
I
I
2
TM
180° el
t1
t2
H
t
L
80 % V
t
10/0.47
50
50
DRM
180° conduction, half sine wave
As AC switch
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x  x I
(I >  x I
(16.7 % x  x I
(I >  x I
I
T
T
pk
J
J
= 25 °C, I
= 25 °C, V
= 600 A, T
530
650
430
345
270
60
I
TM
T(AV)
T(AV)
), T
), T
T
A
J
> 30 A
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
T(AV)
T(AV)
= 12 V, Ra = 6 , I
= T
J
J
TEST CONDITIONS
= T
= T
565
670
490
390
290
85
J
< I <  x I
< I <  x I
maximum, t
J
J
80 % V
180° el
maximum
maximum
RRM
RRM
10/0.47
50
-
[e-mail]
T(AV)
T(AV)
DRM
1000
Sinusoidal half wave,
initial T
p
800
720
540
390
), T
), T
I
60
TM
= 10 ms sine pulse
g
= 1A
J
J
= T
= T
J
= T
J
J
maximum
maximum
J
maximum
2400
1540
610
390
85
-
80 % V
100 µs
10/0.47
50
-
DRM
Document Number: 93685
VALUES
7130
7470
6000
6280
2550
1000
3150
2050
1.30
1.38
0.90
0.71
1.84
180
400
255
232
180
164
600
I
830
540
85
60
TM
-
Revision: 19-Jul-10
UNITS
UNITS
kA
/μF
A/μs
kA
m
mA
°C
°C
A
V
A
A
V
V
2
2
s
s