RB717FT106 Rohm Semiconductor, RB717FT106 Datasheet
RB717FT106
Manufacturer Part Number
RB717FT106
Description
DIODE SCHOTTKY 40V 30MA SOT-323
Manufacturer
Rohm Semiconductor
Datasheet
1.RB717FT106.pdf
(4 pages)
Specifications of RB717FT106
Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
370mV @ 1mA
Current - Reverse Leakage @ Vr
1µA @ 10V
Current - Average Rectified (io) (per Diode)
30mA
Voltage - Dc Reverse (vr) (max)
40V
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Anode
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Schottky
Diode Configuration
Repetitive Reverse Voltage Vrrm Max
40V
Forward Current If(av)
30mA
Forward Voltage Vf Max
370mV
Forward Surge Current Ifsm Max
200mA
Operating
RoHS Compliant
Product
Schottky Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
0.03 A
Max Surge Current
0.2 A
Configuration
Dual Common Anode
Forward Voltage Drop
0.37 V @ 0.001 A
Maximum Reverse Leakage Current
1 uA @ 10 V
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
RB717FT106TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RB717FT106
Manufacturer:
SMK
Quantity:
207
Part Number:
RB717FT106
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Diodes
Schottky barrier diode
RB717F
Low current rectification
1) Small mold type. (UMD3)
2) Low V
3) High reliability.
Silicon epitaxial planar
R
Reevrse voltage (DC)
A
For
Junct
S
(
For
R
Capacitance between terminals
Applications
Features
Construction
Absolute maximum ratings (Ta=25 C)
*1) Rating of per diode
Electrical characteristics (Ta=25 C)
verage rectifoed forward current *1
torage temperature
everse voltage (repetitive peak)
everse current
ward current surge peak 60Hz 1cyc *1
ward voltage
ion temperature
F
Parameter
Parameter
External dimensions (Unit : mm)
Symbol
Taping specifications (Unit : mm)
V
Ct
I
R
F
Each lead has same dimension
Min.
-
-
-
Symbol
Tstg
V
I
V
FSM
Io
Tj
RM
R
Typ.
2.0
-
-
Max.
0.37
1
-40 to +125
-
Limits
200
125
40
40
30
Unit
μA
pF
Land size figure (Unit : mm)
Structure
V
I
V
V
F
=1mA
R
R
=10V
=1V,f=1MHz
Rev.B
Unit
mA
mA
V
V
Conditions
RB717F
1/3
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RB717FT106 Summary of contents
Page 1
Diodes Schottky barrier diode RB717F Applications Low current rectification Features 1) Small mold type. (UMD3) 2) Low High reliability. Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25 C) Parameter R everse voltage (repetitive peak) Reevrse voltage (DC) ...
Page 2
Diodes Electrical characteristic curves (Ta=25 C) RB717F Rev.B 2/3 ...
Page 3
Diodes RB717F Rev.B 3/3 ...
Page 4
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...