16TTS12SPBF Vishay, 16TTS12SPBF Datasheet - Page 2

• Manufacturer Part Number: 16TTS12SPBF
• Description: SCRs 1200 Volt 16 Amp
• Manufacturer: Vishay

Specifications of 16TTS12SPBF

• Breakover Current Ibo Max: 200 A
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.4 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 60 mA
• Holding Current (ih Max): 100 mA
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Peak Repetitive Off-state Voltage, Vdrm: 1.2kV
• Gate Trigger Current Max, Igt: 90mA
• Current It Av: 10A
• On State Rms Current It(rms): 16A
• Peak Non Rep Surge Current Itsm 50hz: 200A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 94381
Voltage Ratings
16TTS...SPbF SAFE
Bulletin I2216 09/06
Absolute Maximum Ratings
I
I
I
I
I
V
r
V
I
I
I
dv/dt Max. Rate of Rise of off-state Voltage
di/dt
T(AV)
RMS
TSM
RM
2
2
H
L
t
TM
T(TO)
t
√t
/I
DM
Max. Average On-state Current
Max. RMS On-state Current
Max. Peak One Cycle Non-Repetitive
Surge Current
Max. I
Max. I
Max. On-state Voltage Drop
On-state slope resistance
Threshold Voltage
Max.Reverse and Direct
Leakage Current
Holding Current
Max. Rate of Rise of turned-on Current
Parameters
Max. Latching Current
Part Number
2
2
t for fusing
√t for fusing
16TTS08S
16TTS12S
IR
Series
Typ. Max.
peak reverse voltage
16TTS..S
--
2000
V
24.0
170
200
144
200
1.4
1.1
0.5
10
200
500
150
10
16
RRM
100
, maximum
V
1200
800
Units
A
V/μs
A/μs
A
mΩ
mA
mA
mA
2
A
V
V
2
√s
s
@ T
10ms Sine pulse, rated V
10ms Sine pulse, no voltage reapplied
10ms Sine pulse, rated V
10ms Sine pulse, no voltage reapplied
t = 0.1 to 10ms, no voltage reapplied
@ 16A, T
T
T
T
Anode Supply = 6V, Resistive load, Initial I
Anode Supply = 6V, Resistive load
J
J
J
= 125°C
= 25 °C
= 125 °C
C
= 93° C, 180° conduction half sine wave
J
= 25°C
peak direct voltage
Conditions
V
DRM
, maximum
V
V
1200
RRM
RRM
800
R
= rated V
applied
applied
RRM
www.vishay.com
/ V
DRM
I
RRM
T
125°C
=1A
mA
/I
DRM
10
10
2