IMN10T108 Rohm Semiconductor, IMN10T108 Datasheet
IMN10T108
Manufacturer Part Number
IMN10T108
Description
DIODE SWITCH 80V 100MA SOT-457
Manufacturer
Rohm Semiconductor
Datasheet
1.IMN10T108.pdf
(3 pages)
Specifications of IMN10T108
Diode Type
Standard
Voltage - Forward (vf) (max) @ If
1.2V @ 100mA
Current - Reverse Leakage @ Vr
100nA @ 70V
Current - Average Rectified (io) (per Diode)
100mA
Voltage - Dc Reverse (vr) (max)
80V
Reverse Recovery Time (trr)
4ns
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
3 Independent
Mounting Type
Surface Mount
Package / Case
SC-74-6
Forward Current If(av)
100mA
Repetitive Reverse Voltage Vrrm Max
80V
Forward Voltage Vf Max
1.2V
Reverse Recovery Time Trr Max
4ns
Forward Surge Current Ifsm Max
300mA
Operating
RoHS Compliant
Product
Switching Diodes
Peak Reverse Voltage
80 V
Forward Continuous Current
300 mA
Max Surge Current
4 A
Configuration
Triple Parallel
Recovery Time
4 ns
Forward Voltage Drop
1.2 V
Maximum Reverse Leakage Current
0.1 uA
Maximum Power Dissipation
300 mW
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Diode Case Style
SOT-457
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IMN10T108TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IMN10T108
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Diodes
Switching diode
IMN10
Ultra high speed switching
1) Small mold type. (SMD6)
2) High reliability
Silicon epitaxial planar
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Forward current (Single)
Forward current (Double)
Average rectified forward current (single)
Surge current （t=1us）
Power dissipation (TOTAL)(*1)
Junction temperature
Storage temperature
(*1) Not exceed 200mW per element.
Features
Construction
Electrical characteristics (Ta=25°C)
Application
Absolute maximum ratings (Ta=25°C)
Parameter
Parameter
Symbol
V
Ct
trr
I
R
F
External dimensions (Unit : mm)
0.3±0.1
Taping specifications (Unit : mm)
Symbol
I
Tstg
0.05
V
surge
V
I
I
Pd
Io
Tj
FM
FM
(4)
(3)
RM
0.95
R
Min.
各リードとも同寸法
2.9±0.2
1.9±0.2
-
-
-
-
3.2±0.1
Each lead has same dimension
4.0±0.1
(5)
(2)
0.95
Typ.
-
-
-
-
(6)
(1)
-55 to +150
2.0±0.05
Limits
300
450
100
300
150
80
80
4
Max.
1.2
0.1
3.5
4
JEDEC :S0T-457
JEITA : SC-74
ROHM : SMD6
4.0±0.1
1Pin Mark
1.1±0.2
0.8±0.1
week code
0.06
0.15±0.1
Unit
0.1
µA
φ1.55±0.1
0
pF
ns
V
0～0.1
Unit
mW
mA
mA
mA
℃
℃
V
V
A
I
V
V
V
F
=100mA
R
R
R
=70V
=6V , f=1MHz
=6V , IF=5mA , RL=50Ω
φ1.05MIN
Conditions
Structure
Land size figure (Unit : mm)
SMD6
0.45
0.95
0.35
Rev.C
1 9
0.6
0.35
0.95
0.8MIN.
IMN10
0.45
0.3±0.1
1.35±0.1
1/2
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IMN10T108 Summary of contents
Page 1
Diodes Switching diode IMN10 Application Ultra high speed switching Features 1) Small mold type. (SMD6) 2) High reliability Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Forward current (Single) Forward current (Double) ...
Page 2
Diodes Electrical characteristic curves (Ta=25°C) 100 Ta=75℃ Ta=125℃ Ta=25℃ 10 Ta=150℃ Ta=-25℃ 1 0.1 0 100 200 300 400 500 600 700 800 900 100 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 950 Ta=25℃ IF=100mA 940 n=30pcs 930 920 910 AVE:921.7m 900 VF ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...