RB095B-30TL Rohm Semiconductor, RB095B-30TL Datasheet

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... Schottky barrier Diode RB095B-30 Applications General rectification Features 1)Power mold type.(CPD) 2)Low V F 3)High reliability Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(*1) Forward current surge peak (60Hz・1cyc)(*1) ...

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... RB095B-30 10 Ta=150C Ta=125C Ta=25C 1 Ta=75C Ta=-25C 0.1 0.01 0 100 200 300 400 500 600 FORWARD VOLTAGE : V (mV CHARACTERISTICS F F 440 Ta=25C I =3A F 430 n=30pcs 420 AVE:402.0mV 410 400 390 V DISPERSION MAP F 300 250 1cyc Ifsm 200 8 ...

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... RB095B- Sin(=180) 6 D=1 REVERSE VOLTAGE : V ( CHARACTERISTICS break at 30kV No break at 30kV C=200pF C=100pF R=0 R=1.5k ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 　 D=t/T V =15V R T Tj=150 D=1/2 5 Sin(180 100 125 AMBIENT TEMPERATURE : Ta( ...

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