BTA12-700CRG STMicroelectronics, BTA12-700CRG Datasheet - Page 5

Triacs 12 Amp 700 Volt

BTA12-700CRG

Manufacturer Part Number
BTA12-700CRG
Description
Triacs 12 Amp 700 Volt
Manufacturer
STMicroelectronics
Datasheet

Specifications of BTA12-700CRG

Rated Repetitive Off-state Voltage Vdrm
700 V
Breakover Current Ibo Max
125 A
Off-state Leakage Current @ Vdrm Idrm
5 uA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
50 mA
Holding Current (ih Max)
25 mA
Forward Voltage Drop
1.5 V @ 17 A
Mounting Style
Through Hole
Package / Case
TO-220
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Repetitive Peak Forward Blocking Voltage
700 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BTA12-700CRG
Manufacturer:
STM
Quantity:
4 000
BTA12, BTB12, T12xx
Figure 7.
Figure 9.
Figure 11. Relative variation of critical rate of
6
5
4
3
2
1
0
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
1000
100
0
10
(dI/dt)c [T ] /
0.1
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
0.01
B
I
TSM
C
dI/dt limitation:
T1210/SW
(A), I t (A s)
50A/µs
j
25
2
Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width t
value of I
Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
(BW/CW/T1210/T1235)
decrease of main current versus
junction temperature
(dI/dt)c [T s
2
1.0
0.10
p
(dV/dt)c (V/µs)
j
50
< 10 ms and corresponding
pecified]
2
t
t (ms)
T (°C)
p
j
75
10.0
1.00
I
TSM
T1235/T1250/CW/BW
100
I t
2
T initial=25°C
j
10.00
100.0
125
Figure 8.
Figure 10. Relative variation of critical rate of
Figure 12. D
80
70
60
50
40
30
20
10
2.5
2.0
1.5
1.0
0.5
0.0
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
-40
R
I
0.1
GT H L
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
th(j-a)
,I ,I [T ] /
4
-20
D PAK
(°C/W)
2
I
TW
H
& I
L
j
8
I
Figure 8: Relative variation of gate
trigger current, holding current and
latching current versus junction
temperature (typical values)
decrease of main current versus
(dV/dt)c (typical values) (TW)
to ambient versus copper surface
under tab (printed circuit board
FR4, copper thickness: 35 µm)
GT
0
I
2
GT H L
PAK thermal resistance junction
12
,I ,I [T =25°C]
20
1.0
(dV/dt)c (V/µs)
16
j
40
S(cm²)
T (°C)
j
20
60
24
10.0
80
28
Characteristics
100
32
120
36
100.0
5/12
140
40

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