IRKT56/06S90P Vishay, IRKT56/06S90P Datasheet - Page 3

• Manufacturer Part Number: IRKT56/06S90P
• Description: SCR Modules 600 Volt 60 Amp
• Manufacturer: Vishay

Specifications of IRKT56/06S90P

• Mounting Style: Screw
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 94419
Triggering
Thermal and Mechanical Specifications
Blocking
(5) Available with dv/dt = 1000V/ s, to complete code add S90 i.e. IRKT41/16AS90.
(The following table shows the increment of thermal resistance R
V
dv/dt Max. critical rate of rise
T
T
R
R
T
wt
I
P
P
I
-V
V
I
I
V
I
R Conduction (per Junction)
GM
GD
RRM
DRM
Devices
GT
J
stg
INS
thJC
thCS
GM
G(AV)
GD
IRK.41
IRK.56
GT
GM
Parameters
Max. peak gate power
Max. average gate power
Max. peak gate current
Max. peak negative
gate voltage
Max. gate voltage
required to trigger
Max. gate current
required to trigger
Max. gate voltage
that will not trigger
Max. gate current
that will not trigger
Parameters
Max. peak reverse and
off-state leakage current
at V
RMS isolation voltage
of off-state voltage (5)
Parameters
Junction operating
temperature range
Storage temp. range
Max. internal thermal
resistance, junction
to case
Typical thermal resistance
case to heatsink
Mounting torque ± 10%
Approximate weight
Case style
RRM
, V
180
0.11
0.09
DRM
o
to heatsink
busbar
120
0.13
0.11
Sine half wave conduction
o
0.17
0.13
90
IRK.41
IRK.41
IRK.41
o
0.23
2.5
2.5
10
2500 (1 min)
3500 (1 sec)
TO-240AA
- 40 to 125
- 40 to 125
0.23
0.18
110 (4)
60
0.25
500
270
150
4.0
2.5
1.7
0.1
80
10
15
o
5
3
6
IRK.56
IRK.56
IRK.56
0.34
0.27
30
0.20
thJC
2.5
2.5
10
o
when devices operate at different conduction angles than DC)
180
0.09
0.07
o
Units
Units
K/W
Units
V/ s
Nm
mA
mA
°C
gr (oz)
W
mA
V
A
V
V
120
0.14
0.11
Rect. wave conduction
o
Conditions
Mounting surface flat, smooth and greased
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread of
the compound
T
rated V
T
rated V
Per module, DC operation
T
50 Hz, circuit to base, all terminals
shorted
T
gate open circuit
JEDEC
T
T
T
T
T
T
Conditions
Conditions
J
J
J
J
J
J
J
J
J
J
0.18
0.14
= 125
= 125
= 125
= - 40°C
= 25°C
= 125°C
= - 40°C
= 25°C
= 125
90
= 125°C
o
DRM
DRM
o
o
C,
C,
o
o
C, linear to 0.67 V
C, gate open circuit
applied
applied
0.23
0.19
60
IRK.41, .56 Series
o
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
Bulletin I27213 03/06
www.vishay.com
0.34
0.28
30
o
DRM
,
Units
°C/W
3