DSEE30-12A IXYS, DSEE30-12A Datasheet
DSEE30-12A
Manufacturer Part Number
DSEE30-12A
Description
DIODE 1200V 30A TO-247AD
Manufacturer
IXYS
Series
HiPerFRED™r
Datasheet
1.DSEE30-12A.pdf
(2 pages)
Specifications of DSEE30-12A
Voltage - Forward (vf) (max) @ If
2.5V @ 30A
Current - Reverse Leakage @ Vr
200µA @ 1200V
Current - Average Rectified (io) (per Diode)
30A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Reverse Recovery Time (trr)
30ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Series Connection
Mounting Type
Through Hole, Radial
Package / Case
TO-247AD
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Series
Reverse Voltage
1200 V
Forward Voltage Drop
2.5 V
Recovery Time
30 ns (Typ)
Forward Continuous Current
30 A
Max Surge Current
200 A
Reverse Current Ir
200 uA
Power Dissipation
165 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Vrrm, (v)
1200
Ifavm, D = 0.5, Total, (a)
30
Ifavm, D = 0.5, Per Diode, (a)
30
@ Tc, (°c)
90
Vf, Max, If=ifavm, (v)
1.78
@ Tvjm, (°c)
125
Trr, Typ, Tvj =25°c, (ns)
30
Irm , Typ, Tvj =100°c, (a)
4
@ -di/dt, (a/µs)
100
Tvjm, (°c)_
175
Rthjc, Max, (k/w)
0.90
Package Style
TO-247AD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q1921175
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DSEE30-12A
Manufacturer:
IXYS
Quantity:
6 285
© 2002 IXYS All rights reserved
HiPerFRED
V
1200
Symbol
I
I
I
E
I
T
T
T
T
P
M
Weight
Symbol
I
V
R
R
t
I
Notes: Data given for T
IXYS reserves the right to change limits, test conditions and dimensions.
FRMS
FAVM
FSM
AR
R
RM
rr
L
V
VJ
VJM
stg
RRM
AS
tot
F
thCH
thJC
d
Diodes connected in series
Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse test: pulse Width = 300 µs, Duty Cycle < 2.0 %
V
600
RRM
V
Conditions
T
T
T
I
V
1.6 mm (0.063 in) from case for 10 s
T
Mounting Torque
typical
Conditions
T
T
I
I
V
V
T
AS
F
F
C
VJ
VJ
C
VJ
VJ
VJ
A
R
R
= 30 A;
= 1 A; -di/dt = 200 A/µs;
= 90°C; rectangular, d = 0.5
= 1.5· V
= 1.3 A; L = 180 µH
= 25°C
= 30 V
= 100 V; I
= 45°C; t
= 25°C; non-repetitive
= 25°C V
= 100°C
= 150°C V
VJ
TM
= 25
Type
DSEE30-12A
R
typ.; f = 10 kHz; repetitive
p
T
T
F
= 10 ms (50 Hz), sine
O
VJ
VJ
R
R
C and per diode unless otherwise specified
= 50 A; -di
= V
= V
= 125°C
= 25°C
Epitaxial Diode
RRM
RRM
F
/dt = 100 A/µs
ADVANCE TECHNICAL INFORMATION
0.25
typ.
1
Characteristic Values
30
4
-55...+175
-55...+150
Maximum Ratings
0.9/6
200
175
165
2
260
0.2
0.1
60
30
2
max.
1.75
200
2.5
0.9
2
Nm/ lb.in.
3
K/W
K/W
mA
°C
mJ
° C
° C
° C
µA
W
ns
A
A
A
A
V
V
A
g
I
V
t
TO-247 AD
Features
Applications
Advantages
Notes
for characteristic curves.
FAV
rr
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
Soft recovery behaviour
Epoxy meets UL 94V-0
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low I
- Power dissipation within the diode
- Turn-on loss in the commutating
Please see DSEP 30-06A Data Sheet
RRM
switch
RM
RM
-values
= 30 A
= 1200 V
= 30 ns
1
reduces:
2
3
DSEE30-12A
DS98962 (10/02)
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DSEE30-12A Summary of contents
Page 1
... Characteristic Values typ. max. 200 2 1.75 2.5 0.9 0.25 30 /dt = 100 A/µ DSEE30-12A FAV V = 1200 V RRM TO-247 Features mJ Planar passivated chips Very short recovery time A Extremely low switching losses ° C Low I ...
Page 2
... TO-247 AD Outline Dim ∅ 4,835,592 4,881,106 5,017,508 5,049,961 4,850,072 4,931,844 5,034,796 5,063,307 DSEE30-12A ∅ Millimeter Inches Min. Max. Min. Max. 4.7 5.3 .185 .209 2.2 2.54 .087 .102 2.2 2.6 .059 .098 1.0 1.4 .040 .055 1.65 2.13 .065 .084 2.87 3.12 ...