BAV70TT1G ON Semiconductor, BAV70TT1G Datasheet - Page 2
BAV70TT1G
Manufacturer Part Number
BAV70TT1G
Description
DIODE SWITCH DUAL 70V SC75-3
Manufacturer
ON Semiconductor
Datasheet
1.BAV70TT1G.pdf
(5 pages)
Specifications of BAV70TT1G
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
5µA @ 70V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
70V
Reverse Recovery Time (trr)
6ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416, EMT3, 3-SSMini
Product
Switching Diodes
Peak Reverse Voltage
70 V
Forward Continuous Current
0.2 A
Max Surge Current
0.5 A
Configuration
Dual Common Cathode
Recovery Time
6 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
5 uA
Operating Temperature Range
- 55 C to + 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Rectifier Type
Small Signal Switching Diode
Peak Rep Rev Volt
70V
Avg. Forward Curr (max)
0.2A
Rev Curr
5uA
Peak Non-repetitive Surge Current (max)
0.5A
Forward Voltage
1.25V
Operating Temp Range
-55C to 150C
Package Type
SOT-416
Rev Recov Time
6ns
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Dc
0535
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAV70TT1G
BAV70TT1GOSTR
BAV70TT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BAV70TT1G
Manufacturer:
ON Semiconductor
Quantity:
55 901
Company:
Part Number:
BAV70TT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
BAV70TT1G
Manufacturer:
ON/安森美
Quantity:
20 000
3. For each individual diode while the second diode is unbiased.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Reverse Breakdown Voltage
Reverse Voltage Leakage Current (Note 3)
Diode Capacitance
Forward Voltage
Reverse Recovery Time
Forward Recovery Voltage
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(BR)
F
F
F
F
F
F
R
R
R
= 1.0 mAdc)
= 10 mAdc)
= 50 mAdc)
= 150 mAdc)
= I
= 10 mAdc, t
= 70 Vdc)
= 50 Vdc)
= 0, f = 1.0 MHz)
= 100 mAdc)
R
= 10 mAdc, R
r
= 20 ns) (Figure 2)
L
= 100 Ω, I
Characteristic
R(REC)
(T
= 1.0 mAdc) (Figure 1)
A
= 25C unless otherwise noted)
http://onsemi.com
2
Symbol
V
V
C
V
(BR)
I
I
t
RF
R
R
rr
D
F
Min
70
--
--
--
--
--
--
--
--
--
1000
1250
Max
1.75
100
715
855
5.0
1.5
6.0
--
mVdc
mAdc
nAdc
Unit
Vdc
pF
ns
V