BTA12-800BRG STMicroelectronics, BTA12-800BRG Datasheet - Page 4

• Manufacturer Part Number: BTA12-800BRG
• Description: Triacs 12 Amp 800 Volt
• Manufacturer: STMicroelectronics

Specifications of BTA12-800BRG

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 126 A
• Off-state Leakage Current @ Vdrm Idrm: 5 uA
• Gate Trigger Voltage (vgt): 1.3 V
• Gate Trigger Current (igt): 100 mA
• Holding Current (ih Max): 50 mA
• Forward Voltage Drop: 1.55 V @ 17 A
• Mounting Style: Through Hole
• Package / Case: TO-220
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Characteristics
4/12
Figure 1.
Figure 3.
Figure 5.
16
14
12
10
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8
6
4
0
2
10
1
0
P(W)
0.5
0
I
I
T(RMS)
TM
R = 35 m
V = 0.85V
T =
1
to
d
j
(A)
T max.
j
T max.
j
1.0
(A)
2
Ω
25
Maximum power dissipation versus
RMS on-state current (full cycle)
RMS on-state current versus
ambient temperature (printed
circuit board FR4, copper
thickness: 35µm) (full cycle)
On-state characteristics (maximum
values)
1.5
3
4
2.0
T = 25°C
j
50
5
I
T(RMS)
.
2.5
T (°C)
V
C
TM
6
(V)
(A)
3.0
7
75
3.5
8
9
(S=1cm )
4.0
100
D PAK
2
10
2
4.5
11
125
5.0
12
Figure 2.
Figure 4.
Figure 6.
14
13
12
10
11
1E+0
130
120
110
100
1E-2
9
8
7
6
5
4
3
2
0
1E-1
1
90
80
70
60
50
40
30
20
10
0
0
I
T(RMS)
1E-3
1
I
TSM
K=[Z /R
(A)
(A)
Repetitive
T =90°C
C
th
Z
25
th(j-c)
1E-2
th
RMS on-state current versus case
temperature (full cycle)
Relative variation of thermal
impedance versus pulse duration
Surge peak on-state current versus
number of cycles
]
Non repetitive
T initial=25°C
10
j
1E-1
50
Number of cycles
T (°C)
C
t (s)
p
1E+0
BTA12, BTB12, T12xx
75
Z
th(j-a)
100
1E+1
BTA
100
BTB / T12
t=20ms
One cycle
1E+2
5E+2
1000
125