BAW56T116 Rohm Semiconductor, BAW56T116 Datasheet - Page 2

• Manufacturer Part Number: BAW56T116
• Description: DIODE SWITCH HI SPEED 70V SOT-23
• Manufacturer: Rohm Semiconductor

Specifications of BAW56T116

• Diode Type: Standard
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 1µA @ 75V
• Current - Average Rectified (io) (per Diode): 215mA
• Voltage - Dc Reverse (vr) (max): 70V
• Reverse Recovery Time (trr): 4ns
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Anode
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Forward Current If(av): 215mA
• Repetitive Reverse Voltage Vrrm Max: 85V
• Forward Voltage Vf Max: 1.25V
• Reverse Recovery Time Trr Max: 4ns
• Forward Surge Current Ifsm Max: 4A
• Operating: RoHS Compliant
• Product: Switching Diodes
• Peak Reverse Voltage: 85 V
• Forward Continuous Current: 450 mA
• Max Surge Current: 4 A
• Configuration: Dual Common Anode
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 1 uA
• Maximum Power Dissipation: 225 mW
• Operating Temperature Range: + 150 C
• Maximum Diode Capacitance: 2 pF
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAW56T116TR

Diodes
BAV70
BAW56
BAV99
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
BAV70
BAW56
BAV99
Electrical characteristic curves (Ta=25°C)
125
100
0.5
0.2
0.1
20
10
50
75
50
25
Type
5
2
1
0
Type
0
0
Fig.1 Power attenuation curve
Fig.4 Forward characteristics
0.2
AMBIENT TEMPERATURE : T a ( C)
Ta 85 C
25
FORWARD VOLTAGE : V
50 C
25 C
30 C
0.4
0 C
(N Type)
reverse
voltage
V
Peak
50
RM
0.6
V
Forward voltage Reverse current
75
85
85
Max.
1.25
1.25
1.25
F
(V)
(V)
0.8 1.0
75
100
I
reverse
Cond.
F
voltage
V
150
150
150
(mA)
DC
R
1.2 1.4
70
70
75
F
(V)
(V)
125
I
R
Max.
150
1.6
2.5
1.0
1.0
I
( A)
forward
current
FM
Peak
450
450
450
(mA)
1000
0.01
V
Cond.
0.5
0.2
0.1
100
20
10
0.1
50
10
R
5
2
1
70
75
75
1
0
0
(V)
rectifying
current
I
Fig.2 Forward characteristics
Fig.5 Reverse characteristics
Mean
F
0.2
215
215
215
10
Ta 85 C
(mA)
FORWARD VOLTAGE : V
Capacitance between terminals
REVERSE VOLTAGE : V
C
50 C
25 C
30 C
0.4
Max.
0 C
20
T
(P Type)
1.5
2.0
1.5
(N Type)
(pF)
0.6
30
I
current
Surge
surge
(1 s)
0.8 1.0
40
V
4
4
4
R
(A)
0
0
0
(V)
50
Cond.
1.2 1.4
60
dissipation
F
R
Ta 100 C
(TOTAL)
(V)
(V)
Pd (mW)
f (MHz)
Power
300
225
300
70
75 C
50 C
25 C
25 C
1
1
1
0 C
1.6
BAV70 / BAW56 / BAV99
80
t
temperature
Max.
rr
Junction
(ns)
4
4
4
1000
Tj ( C )
0.01
100
0.1
150
150
150
10
1
4
2
0
Reverse recovery time
0
0
Fig.6 Capacitance between
Fig.3 Reverse characteristics
2
REVERSE VOLTAGE : V
V
10
4
REVERSE VOLTAGE : V
R
temperature
10
10
10
terminals characteristics
(P Type)
55 to 150
55 to 150
55 to 150
Tstg ( C )
(V)
Storage
6
20
8
Cond.
10 12
P Type
30
I
N Type
F
P / N Type
(mA)
10
10
10
14
R
Ta 100 C
40
16
(V)
R
N
N
f 1MHz
P
(V)
75 C
50 C
25 C
25 C
18 20
0 C
2/3
50