BT131-600E NXP Semiconductors, BT131-600E Datasheet - Page 8

• Manufacturer Part Number: BT131-600E
• Description: Triacs TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BT131-600E

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 13.7 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 10 mA
• Forward Voltage Drop: 1.5 V @ 1.4 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT131-600E,412

Philips Semiconductors
7. Package information
BT131_SER_D_E_2
Product data sheet
Fig 11. Normalized holding current as a function of
I
H(25 C)
I
H(Tj)
3
2
1
0
junction temperature
50
0
Epoxy meets requirements of UL94 V-0 at
50
100
001aab099
T
j
( C)
Rev. 02 — 17 November 2005
150
Fig 12. Rate of rise of off-state voltage as a function of
dV
(V/ s)
(1) BT131-600E, BT131-800E
(2) BT131-600D, BT131-800D
D
10
10
/dt
10
1
3
2
junction temperature; minimum values
1
0
BT131 series D and E
8
inch.
50
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
(2)
(1)
100
Triacs logic level
T
j
003aaa047
( C)
150
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