BT137X-600E NXP Semiconductors, BT137X-600E Datasheet
BT137X-600E
Specifications of BT137X-600E
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BT137X-600E Summary of contents
Page 1
... CONDITIONS full sine wave ˚C hs full sine wave ˚C prior to j surge 16 0 / T2+ G+ T2+ G- T2- G- T2- G+ over any 20 ms period 1 Product specification BT137X series E MAX. MAX. BT137X- 600E 800E 600 800 SYMBOL T2 MIN. MAX. -600 -800 1 - 600 800 - ...
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... T2 400 0 125 ˚ 125 ˚C D DRM(max) j CONDITIONS 125 ˚C; DM DRM(max) j exponential waveform; gate open circuit 0 / DRM(max Product specification BT137X series E MIN. TYP. MAX. UNIT - - 2500 MIN. TYP. MAX. UNIT - - 4.5 K 6.5 K K/W MIN. TYP. MAX. UNIT - 3.0 25 ...
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... Fig.5. Maximum permissible repetitive rms on-state , for current I p 20ms. p 1.6 I TSM 1.4 T time 1.2 0.8 0.6 0.4 100 1000 Product specification BT137X series E IT(RMS BT137X 100 Ths / C versus heatsink temperature T IT(RMS 0.01 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents Hz; T 73˚C. hs ...
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... I (25˚C), Fig.11. Transient thermal impedance dVD/dt (V/us) 1000 100 10 1 100 150 (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT137X series E max typ 0.5 1 1 unidirectional bidirectional 0.1ms 1ms 10ms 0. j-hs pulse width 100 /dt versus junction temperature T ...
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... Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". June 2001 10.3 max 3.2 3.0 2.8 seating 15.8 19 max. max. plane 3 2 2.54 0.5 5.08 5 Product specification BT137X series E 4.6 max 2.9 max 6.4 15.8 max 0.6 2.5 1.0 (2x) 0.9 0.7 1.3 Rev 1.400 ...
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... This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A 6 Product specification BT137X series E Rev 1.400 ...